Growth and reliability of thick gate oxide in U-trench for power MOSFET's

C. T. Wu, R. S. Ridley, G. Dolny, T. Grebs, C. Knoedler, S. Suliman, B. Venkataraman, O. Awadelkarim, J. Ruzyllo

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

Growth kinetics and reliability of thick gate oxides grown into 2 μm deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the trench is a result of an insufficient supply of oxidizing species which nonuniformities is enhanced by 2D oxidation in the corners. The effect of 2D oxidation is more pronounced in narrow trenches. The reliability of trench oxides was found to be dependent on the oxidation temperature, trench geometry, and substrate's conductivity type. No effect of temperature of oxidation and trench geometry on interface trap density was observed.

Original languageEnglish (US)
Pages149-152
Number of pages4
StatePublished - Jan 1 2002
Event14th International Symposium on Power Semiconductor Devices and IC's 2002 - Santa Fe, NM, United States
Duration: Jun 4 2002Jun 7 2002

Other

Other14th International Symposium on Power Semiconductor Devices and IC's 2002
CountryUnited States
CitySanta Fe, NM
Period6/4/026/7/02

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Wu, C. T., Ridley, R. S., Dolny, G., Grebs, T., Knoedler, C., Suliman, S., Venkataraman, B., Awadelkarim, O., & Ruzyllo, J. (2002). Growth and reliability of thick gate oxide in U-trench for power MOSFET's. 149-152. Paper presented at 14th International Symposium on Power Semiconductor Devices and IC's 2002, Santa Fe, NM, United States.