Growth and reliability of thick gate oxide in U-trench for power MOSFET's

C. T. Wu, R. S. Ridley, G. Dolny, T. Grebs, C. Knoedler, S. Suliman, B. Venkataraman, O. Awadelkarim, J. Ruzyllo

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Growth kinetics and reliability of thick gate oxides grown into 2 μm deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the trench is a result of an insufficient supply of oxidizing species which nonuniformities is enhanced by 2D oxidation in the corners. The effect of 2D oxidation is more pronounced in narrow trenches. The reliability of trench oxides was found to be dependent on the oxidation temperature, trench geometry, and substrate's conductivity type. No effect of temperature of oxidation and trench geometry on interface trap density was observed.

Original languageEnglish (US)
Pages149-152
Number of pages4
StatePublished - Jan 1 2002
Event14th International Symposium on Power Semiconductor Devices and IC's 2002 - Santa Fe, NM, United States
Duration: Jun 4 2002Jun 7 2002

Other

Other14th International Symposium on Power Semiconductor Devices and IC's 2002
CountryUnited States
CitySanta Fe, NM
Period6/4/026/7/02

Fingerprint

Oxidation
Oxides
Geometry
Growth kinetics
Temperature
Power MOSFET
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Wu, C. T., Ridley, R. S., Dolny, G., Grebs, T., Knoedler, C., Suliman, S., ... Ruzyllo, J. (2002). Growth and reliability of thick gate oxide in U-trench for power MOSFET's. 149-152. Paper presented at 14th International Symposium on Power Semiconductor Devices and IC's 2002, Santa Fe, NM, United States.
Wu, C. T. ; Ridley, R. S. ; Dolny, G. ; Grebs, T. ; Knoedler, C. ; Suliman, S. ; Venkataraman, B. ; Awadelkarim, O. ; Ruzyllo, J. / Growth and reliability of thick gate oxide in U-trench for power MOSFET's. Paper presented at 14th International Symposium on Power Semiconductor Devices and IC's 2002, Santa Fe, NM, United States.4 p.
@conference{be66c29d5ebc44e19161108ba69ed1de,
title = "Growth and reliability of thick gate oxide in U-trench for power MOSFET's",
abstract = "Growth kinetics and reliability of thick gate oxides grown into 2 μm deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the trench is a result of an insufficient supply of oxidizing species which nonuniformities is enhanced by 2D oxidation in the corners. The effect of 2D oxidation is more pronounced in narrow trenches. The reliability of trench oxides was found to be dependent on the oxidation temperature, trench geometry, and substrate's conductivity type. No effect of temperature of oxidation and trench geometry on interface trap density was observed.",
author = "Wu, {C. T.} and Ridley, {R. S.} and G. Dolny and T. Grebs and C. Knoedler and S. Suliman and B. Venkataraman and O. Awadelkarim and J. Ruzyllo",
year = "2002",
month = "1",
day = "1",
language = "English (US)",
pages = "149--152",
note = "14th International Symposium on Power Semiconductor Devices and IC's 2002 ; Conference date: 04-06-2002 Through 07-06-2002",

}

Wu, CT, Ridley, RS, Dolny, G, Grebs, T, Knoedler, C, Suliman, S, Venkataraman, B, Awadelkarim, O & Ruzyllo, J 2002, 'Growth and reliability of thick gate oxide in U-trench for power MOSFET's' Paper presented at 14th International Symposium on Power Semiconductor Devices and IC's 2002, Santa Fe, NM, United States, 6/4/02 - 6/7/02, pp. 149-152.

Growth and reliability of thick gate oxide in U-trench for power MOSFET's. / Wu, C. T.; Ridley, R. S.; Dolny, G.; Grebs, T.; Knoedler, C.; Suliman, S.; Venkataraman, B.; Awadelkarim, O.; Ruzyllo, J.

2002. 149-152 Paper presented at 14th International Symposium on Power Semiconductor Devices and IC's 2002, Santa Fe, NM, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Growth and reliability of thick gate oxide in U-trench for power MOSFET's

AU - Wu, C. T.

AU - Ridley, R. S.

AU - Dolny, G.

AU - Grebs, T.

AU - Knoedler, C.

AU - Suliman, S.

AU - Venkataraman, B.

AU - Awadelkarim, O.

AU - Ruzyllo, J.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Growth kinetics and reliability of thick gate oxides grown into 2 μm deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the trench is a result of an insufficient supply of oxidizing species which nonuniformities is enhanced by 2D oxidation in the corners. The effect of 2D oxidation is more pronounced in narrow trenches. The reliability of trench oxides was found to be dependent on the oxidation temperature, trench geometry, and substrate's conductivity type. No effect of temperature of oxidation and trench geometry on interface trap density was observed.

AB - Growth kinetics and reliability of thick gate oxides grown into 2 μm deep trenches is investigated. The oxide thickness nonuniformities are observed at the bottom of the trench. It is postulated that thinning of the oxide at the bottom of the trench is a result of an insufficient supply of oxidizing species which nonuniformities is enhanced by 2D oxidation in the corners. The effect of 2D oxidation is more pronounced in narrow trenches. The reliability of trench oxides was found to be dependent on the oxidation temperature, trench geometry, and substrate's conductivity type. No effect of temperature of oxidation and trench geometry on interface trap density was observed.

UR - http://www.scopus.com/inward/record.url?scp=0036045602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036045602&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036045602

SP - 149

EP - 152

ER -

Wu CT, Ridley RS, Dolny G, Grebs T, Knoedler C, Suliman S et al. Growth and reliability of thick gate oxide in U-trench for power MOSFET's. 2002. Paper presented at 14th International Symposium on Power Semiconductor Devices and IC's 2002, Santa Fe, NM, United States.