Growth dynamics and exciton localization in strained CdSe quantum structures

F. S. Flack, A. Hunt, H. Hennessey, N. Samarth, J. Levy, V. Nikitin, S. A. Crooker, D. D. Awschalom

Research output: Contribution to journalConference article

8 Scopus citations

Abstract

Coherently strained CdSe quantum structures are fabricated under varying dynamical growth conditions during the epitaxy of cubic CdSe on (100) ZnSe. Reflection high energy electron diffraction (RHEED) is employed to monitor the growth mode (2D vs. 3D). Conventional photoluminescence (PL) shows that both growth modes yield quantum structures with high PL efficiencies in which excitons are strongly localized by interface fluctuations at varying length scales. Spatially-resolved, near-field PL from quantum structures formed during 3D growth reveals reproducible fine structure in the PL spectrum attributed to emission from excitons laterally confined to quantum dot-like regions. Transmission electron microscopy (TEM) studies suggest that these observations result from a combination of island growth and strain-driven interdiffusion.

Original languageEnglish (US)
Pages (from-to)169-174
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume417
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Flack, F. S., Hunt, A., Hennessey, H., Samarth, N., Levy, J., Nikitin, V., Crooker, S. A., & Awschalom, D. D. (1996). Growth dynamics and exciton localization in strained CdSe quantum structures. Materials Research Society Symposium - Proceedings, 417, 169-174.