Growth kinetics and polytype stability in halide chemical vapor deposition of SiC

S. Nigam, H. J. Chung, S. W. Huh, J. Grim, A. Y. Polyakov, M. A. Fanton, B. Weiland, D. W. Snyder, M. Skowronski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Growth rates and relative stability of 6H- and 4H-SiC have been studied as a function of growth conditions during Halide Chemical Vapor Deposition (HCVD) process using silicon tetrachloride, propane and hydrogen as reactants. The growth temperature ranged from 2000 to 2150°C. Silicon carbide crystals were deposited at growth rates in the 100-300 um/hr range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. High resolution x-ray diffraction measurements show that the growth on Si-face of 6H- and C-face of 4H-SiC substrates resulted in single crystal 6H- and 4H-SiC polytype, respectively. The growth rate results have been interpreted using thermodynamic equilibrium calculations.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Pages27-30
Number of pages4
EditionPART 1
ISBN (Print)9780878494255
DOIs
StatePublished - Jan 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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