Growth kinetics study in halide chemical vapor deposition of SiC

S. Nigam, H. J. Chung, A. Y. Polyakov, M. A. Fanton, B. E. Weiland, D. W. Snyder, M. Skowronski

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 °C. High-quality SiC crystals were deposited at growth rates in the 100-300 μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations.

Original languageEnglish (US)
Pages (from-to)112-122
Number of pages11
JournalJournal of Crystal Growth
Volume284
Issue number1-2
DOIs
StatePublished - Oct 15 2005

Fingerprint

Growth kinetics
halides
Chemical vapor deposition
vapor deposition
Silicon
Propane
kinetics
Growth temperature
Hydrogen
Carbon
silicon tetrachloride
Single crystals
Thermodynamics
Crystals
thermodynamic equilibrium
propane
purity
adjusting
carbon
single crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Nigam, S. ; Chung, H. J. ; Polyakov, A. Y. ; Fanton, M. A. ; Weiland, B. E. ; Snyder, D. W. ; Skowronski, M. / Growth kinetics study in halide chemical vapor deposition of SiC. In: Journal of Crystal Growth. 2005 ; Vol. 284, No. 1-2. pp. 112-122.
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Nigam, S, Chung, HJ, Polyakov, AY, Fanton, MA, Weiland, BE, Snyder, DW & Skowronski, M 2005, 'Growth kinetics study in halide chemical vapor deposition of SiC', Journal of Crystal Growth, vol. 284, no. 1-2, pp. 112-122. https://doi.org/10.1016/j.jcrysgro.2005.06.027

Growth kinetics study in halide chemical vapor deposition of SiC. / Nigam, S.; Chung, H. J.; Polyakov, A. Y.; Fanton, M. A.; Weiland, B. E.; Snyder, D. W.; Skowronski, M.

In: Journal of Crystal Growth, Vol. 284, No. 1-2, 15.10.2005, p. 112-122.

Research output: Contribution to journalArticle

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AU - Snyder, D. W.

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AB - Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 °C. High-quality SiC crystals were deposited at growth rates in the 100-300 μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations.

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