Growth kinetics study in halide chemical vapor deposition of SiC

S. Nigam, H. J. Chung, A. Y. Polyakov, M. A. Fanton, B. E. Weiland, D. W. Snyder, M. Skowronski

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27 Scopus citations

Abstract

Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 °C. High-quality SiC crystals were deposited at growth rates in the 100-300 μm/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations.

Original languageEnglish (US)
Pages (from-to)112-122
Number of pages11
JournalJournal of Crystal Growth
Volume284
Issue number1-2
DOIs
StatePublished - Oct 15 2005

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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