Growth mechanisms and size-dependent characteristics of Si and Si 1-xGex nanowires

J. M. Redwing, P. Nimmatoori, K. K. Lew, X. Zhang, Q. Zhang, T. E. Clark, L. Pan, E. C. Dickey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si and Si1-xGexnanowires are of interest for nanoscale electronics, sensors and photovoltaics. These structures are commonly formed by chemical vapor deposition via a metal-mediated vapor-liquid-solid mechanism using SiH4and GeH4sources. The effect of growth conditions on the growth rate and composition of Si1-xGe xwas investigated. This work reveals a difference in the mechanism of incorporation of Si into Si1-xGexnanowires compared to Si nanowire growth which is believed to arise as a result of gas phase interactions between SiH4and GeH4. The growth of Si 1-xGex/Si axial heterostructured nanowires was also investigated. Compositional analysis indicates that the Ge profile exhibits turn-on and turn-off transients which are associated with the time required to saturate and deplete Ge from the Au-Si-Ge catalyst. This leads to an increase in the interfacial width with increasing nanowire diameter.

Original languageEnglish (US)
Title of host publicationECS Transactions - EuroCVD 17/CVD 17
Pages1145-1152
Number of pages8
Edition8 PART 2
DOIs
StatePublished - 2009
Event17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Publication series

NameECS Transactions
Number8 PART 2
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period10/4/0910/9/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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