Growth mode of multilayer methane on graphite at low temperatures

Hyung K. Kim, Qiming Zhang, Moses Hung-Wai Chan

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The growth process of multilayer methane on graphite was studied by a.c. heat-capacity technique in the temperature range 4-40 K. The heat-capacity anomalies related to orientational-ordering transitions show gradual change with increasing coverage towards bulk-like behaviour. This result is consistent with the conclusion that methane grows layer by layer on graphite surface for temperatures > 20 K. Another heat-capacity anomaly, unrelated to orientational-ordering transitions, was observed near 11 K for methane film with coverages higher than two layers. We suggest this anomaly is probably related to a structural transition in the multilayer film, possibly due to a wetting transition.

Original languageEnglish (US)
Pages (from-to)1647-1656
Number of pages10
JournalJournal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics
Volume82
Issue number10
DOIs
StatePublished - Dec 1 1986

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Graphite
Methane
Specific heat
Multilayers
methane
graphite
specific heat
anomalies
Multilayer films
Temperature
Wetting
wetting
temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry

Cite this

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Growth mode of multilayer methane on graphite at low temperatures. / Kim, Hyung K.; Zhang, Qiming; Chan, Moses Hung-Wai.

In: Journal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, Vol. 82, No. 10, 01.12.1986, p. 1647-1656.

Research output: Contribution to journalArticle

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