Growth modes in metal-organic molecular beam epitaxy of TiO2 on r -plane sapphire

Bharat Jalan, Roman Engel-Herbert, Jol Cagnon, Susanne Stemmer

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Phase pure, epitaxial (101) rutile TiO2 films were grown on (012) sapphire substrates at temperatures between 485 and 725 °C using metal-organic molecular beam epitaxy with titanium tetraisopropoxide as the Ti source. Growth modes and rates were investigated as a function of substrate temperature using reflection high-energy electron diffraction, x-ray reflectivity, atomic force microscopy, and transmission electron microscopy. Growth rates were as high as 125 nm/h. The influence of additional oxygen supplied from a rf plasma source was investigated. Without oxygen plasma, the growth rate exhibited reaction and flux-limited regimes and layer-by-layer growth was observed in the initial stages of film growth. With oxygen plasma the growth rate became independent of temperature; films grew initially in step-flow mode and were insulating. The mechanisms for the different growth modes as a function of film thickness, temperature, and presence of oxygen are discussed.

Original languageEnglish (US)
Pages (from-to)230-233
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume27
Issue number2
DOIs
StatePublished - Mar 9 2009

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Aluminum Oxide
Molecular beam epitaxy
Sapphire
sapphire
molecular beam epitaxy
Metals
Oxygen
metals
Plasmas
oxygen plasma
Temperature
Reflection high energy electron diffraction
Plasma sources
Film growth
Substrates
Film thickness
Atomic force microscopy
Titanium
Fluxes
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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Growth modes in metal-organic molecular beam epitaxy of TiO2 on r -plane sapphire. / Jalan, Bharat; Engel-Herbert, Roman; Cagnon, Jol; Stemmer, Susanne.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 27, No. 2, 09.03.2009, p. 230-233.

Research output: Contribution to journalArticle

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