Growth of 6H-SiC crystals with low boron concentration

M. A. Fanton, R. L. Cavalero, B. E. Weiland, R. G. Ray, D. W. Snyder, R. D. Gamble, E. J. Oslosky, W. J. Everson

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Abstract

The effects of growth conditions, diffusion barrier coatings, and alternate hot zone materials on boron incorporation in 6H-SiC boules grown by physical vapor transport were evaluated. Chemical analysis by secondary ion mass spectrometry revealed that commercial source materials combined with standard halogen-purified graphite led to B concentrations on the order of 1.0e17 atoms/cm3. Development of high-purity source material with B concentrations less than 1.8e15 atoms/cm3 subsequently reduced the B concentration in the boule to 3.0e16 atoms/cm3. Application of carbide coatings and the use of pyrolytic graphite components ultimately lead to the growth of SiC boules with B concentrations as low as 2.4e15 atoms/cm 3. Changes in growth temperature (2100-2300 °C) and pressure (5-13.5 Torr) had no measurable effect on B incorporation. Changes in the C/Si ratio due to source graphitization and addition of hydrogen gas to the growth atmosphere also had no effect on B incorporation.

Original languageEnglish (US)
Pages (from-to)363-366
Number of pages4
JournalJournal of Crystal Growth
Volume287
Issue number2
DOIs
StatePublished - Jan 25 2006

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Fanton, M. A., Cavalero, R. L., Weiland, B. E., Ray, R. G., Snyder, D. W., Gamble, R. D., Oslosky, E. J., & Everson, W. J. (2006). Growth of 6H-SiC crystals with low boron concentration. Journal of Crystal Growth, 287(2), 363-366. https://doi.org/10.1016/j.jcrysgro.2005.11.045