Growth of 6H-SiC crystals with low boron concentration

M. A. Fanton, R. L. Cavalero, B. E. Weiland, R. G. Ray, D. W. Snyder, R. D. Gamble, E. J. Oslosky, W. J. Everson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of growth conditions, diffusion barrier coatings, and alternate hot zone materials on boron incorporation in 6H-SiC boules grown by physical vapor transport were evaluated. Chemical analysis by secondary ion mass spectrometry revealed that commercial source materials combined with standard halogen-purified graphite led to B concentrations on the order of 1.0e17 atoms/cm3. Development of high-purity source material with B concentrations less than 1.8e15 atoms/cm3 subsequently reduced the B concentration in the boule to 3.0e16 atoms/cm3. Application of carbide coatings and the use of pyrolytic graphite components ultimately lead to the growth of SiC boules with B concentrations as low as 2.4e15 atoms/cm 3. Changes in growth temperature (2100-2300 °C) and pressure (5-13.5 Torr) had no measurable effect on B incorporation. Changes in the C/Si ratio due to source graphitization and addition of hydrogen gas to the growth atmosphere also had no effect on B incorporation.

Original languageEnglish (US)
Pages (from-to)363-366
Number of pages4
JournalJournal of Crystal Growth
Volume287
Issue number2
DOIs
StatePublished - Jan 25 2006

Fingerprint

Boron
boron
boules
Atoms
Crystals
Graphite
crystals
atoms
Elementary particle sources
coatings
Coatings
Graphitization
Halogens
graphitization
Diffusion barriers
pyrolytic graphite
Growth temperature
Secondary ion mass spectrometry
chemical analysis
carbides

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Fanton, M. A., Cavalero, R. L., Weiland, B. E., Ray, R. G., Snyder, D. W., Gamble, R. D., ... Everson, W. J. (2006). Growth of 6H-SiC crystals with low boron concentration. Journal of Crystal Growth, 287(2), 363-366. https://doi.org/10.1016/j.jcrysgro.2005.11.045
Fanton, M. A. ; Cavalero, R. L. ; Weiland, B. E. ; Ray, R. G. ; Snyder, D. W. ; Gamble, R. D. ; Oslosky, E. J. ; Everson, W. J. / Growth of 6H-SiC crystals with low boron concentration. In: Journal of Crystal Growth. 2006 ; Vol. 287, No. 2. pp. 363-366.
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Fanton, MA, Cavalero, RL, Weiland, BE, Ray, RG, Snyder, DW, Gamble, RD, Oslosky, EJ & Everson, WJ 2006, 'Growth of 6H-SiC crystals with low boron concentration', Journal of Crystal Growth, vol. 287, no. 2, pp. 363-366. https://doi.org/10.1016/j.jcrysgro.2005.11.045

Growth of 6H-SiC crystals with low boron concentration. / Fanton, M. A.; Cavalero, R. L.; Weiland, B. E.; Ray, R. G.; Snyder, D. W.; Gamble, R. D.; Oslosky, E. J.; Everson, W. J.

In: Journal of Crystal Growth, Vol. 287, No. 2, 25.01.2006, p. 363-366.

Research output: Contribution to journalArticle

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AU - Fanton, M. A.

AU - Cavalero, R. L.

AU - Weiland, B. E.

AU - Ray, R. G.

AU - Snyder, D. W.

AU - Gamble, R. D.

AU - Oslosky, E. J.

AU - Everson, W. J.

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N2 - The effects of growth conditions, diffusion barrier coatings, and alternate hot zone materials on boron incorporation in 6H-SiC boules grown by physical vapor transport were evaluated. Chemical analysis by secondary ion mass spectrometry revealed that commercial source materials combined with standard halogen-purified graphite led to B concentrations on the order of 1.0e17 atoms/cm3. Development of high-purity source material with B concentrations less than 1.8e15 atoms/cm3 subsequently reduced the B concentration in the boule to 3.0e16 atoms/cm3. Application of carbide coatings and the use of pyrolytic graphite components ultimately lead to the growth of SiC boules with B concentrations as low as 2.4e15 atoms/cm 3. Changes in growth temperature (2100-2300 °C) and pressure (5-13.5 Torr) had no measurable effect on B incorporation. Changes in the C/Si ratio due to source graphitization and addition of hydrogen gas to the growth atmosphere also had no effect on B incorporation.

AB - The effects of growth conditions, diffusion barrier coatings, and alternate hot zone materials on boron incorporation in 6H-SiC boules grown by physical vapor transport were evaluated. Chemical analysis by secondary ion mass spectrometry revealed that commercial source materials combined with standard halogen-purified graphite led to B concentrations on the order of 1.0e17 atoms/cm3. Development of high-purity source material with B concentrations less than 1.8e15 atoms/cm3 subsequently reduced the B concentration in the boule to 3.0e16 atoms/cm3. Application of carbide coatings and the use of pyrolytic graphite components ultimately lead to the growth of SiC boules with B concentrations as low as 2.4e15 atoms/cm 3. Changes in growth temperature (2100-2300 °C) and pressure (5-13.5 Torr) had no measurable effect on B incorporation. Changes in the C/Si ratio due to source graphitization and addition of hydrogen gas to the growth atmosphere also had no effect on B incorporation.

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