Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

Z. Chen, Y. Pei, S. Newman, Rongming Chu, D. Brown, R. Chung, S. Keller, S. P. Denbaars, S. Nakamura, U. K. Mishra

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm2 /V s. High electron mobility transistors (HEMTs) with 0.65 μm long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

Original languageEnglish (US)
Article number112108
JournalApplied Physics Letters
Volume94
Issue number11
DOIs
StatePublished - Mar 31 2009

Fingerprint

heterojunctions
interlayers
field effect transistors
high electron mobility transistors
buffers
power efficiency
radiant flux density
leakage
mass spectroscopy
atomic force microscopy
room temperature
diffraction
crystals
ions
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, Z. ; Pei, Y. ; Newman, S. ; Chu, Rongming ; Brown, D. ; Chung, R. ; Keller, S. ; Denbaars, S. P. ; Nakamura, S. ; Mishra, U. K. / Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer. In: Applied Physics Letters. 2009 ; Vol. 94, No. 11.
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abstract = "Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm2 /V s. High electron mobility transistors (HEMTs) with 0.65 μm long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48{\%} was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.",
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Chen, Z, Pei, Y, Newman, S, Chu, R, Brown, D, Chung, R, Keller, S, Denbaars, SP, Nakamura, S & Mishra, UK 2009, 'Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer', Applied Physics Letters, vol. 94, no. 11, 112108. https://doi.org/10.1063/1.3103210

Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer. / Chen, Z.; Pei, Y.; Newman, S.; Chu, Rongming; Brown, D.; Chung, R.; Keller, S.; Denbaars, S. P.; Nakamura, S.; Mishra, U. K.

In: Applied Physics Letters, Vol. 94, No. 11, 112108, 31.03.2009.

Research output: Contribution to journalArticle

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AU - Chen, Z.

AU - Pei, Y.

AU - Newman, S.

AU - Chu, Rongming

AU - Brown, D.

AU - Chung, R.

AU - Keller, S.

AU - Denbaars, S. P.

AU - Nakamura, S.

AU - Mishra, U. K.

PY - 2009/3/31

Y1 - 2009/3/31

N2 - Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm2 /V s. High electron mobility transistors (HEMTs) with 0.65 μm long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

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