Growth of bulk SiC by halide chemical vapor deposition

M. Fanton, M. Skowronski, D. Snyder, H. J. Chung, S. Nigam, B. Weiland, S. W. Huh

Research output: Contribution to journalConference article

25 Citations (Scopus)

Abstract

A novel halide chemical vapor deposition (HCVD) process has been developed for bulk growth of high purity, single crystal 6H SiC. The effects of major process parameters including furnace temperature over the range of 1900-2150°C, reactor pressure over the range of 20-400 torr, reactant concentrations, and flow rates on the growth rate, crystallinity, and electrical properties of the single-crystal 6H boules grown by HCVD are described. Typical growth rates for the 6H polytype are on the order of 100-125 μm/h with a maximum observed rate of 180μm/h. Thicknesses up to 1 mm have been demonstrated. GDMS analyses of the purity of HCVD grown material is discussed and compared to 6H SiC produced by commercial PVT and HTCVD processes. Boron and aluminum concentrations less than 1.8 E15 atoms/cm3 were demonstrated.

Original languageEnglish (US)
Pages (from-to)87-90
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
StatePublished - Nov 25 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

Fingerprint

halides
Chemical vapor deposition
vapor deposition
purity
Single crystals
boules
Boron
single crystals
Aluminum
furnaces
crystallinity
boron
Electric properties
Furnaces
flow velocity
electrical properties
reactors
Flow rate
aluminum
Atoms

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Fanton, M., Skowronski, M., Snyder, D., Chung, H. J., Nigam, S., Weiland, B., & Huh, S. W. (2004). Growth of bulk SiC by halide chemical vapor deposition. Materials Science Forum, 457-460(I), 87-90.
Fanton, M. ; Skowronski, M. ; Snyder, D. ; Chung, H. J. ; Nigam, S. ; Weiland, B. ; Huh, S. W. / Growth of bulk SiC by halide chemical vapor deposition. In: Materials Science Forum. 2004 ; Vol. 457-460, No. I. pp. 87-90.
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Fanton, M, Skowronski, M, Snyder, D, Chung, HJ, Nigam, S, Weiland, B & Huh, SW 2004, 'Growth of bulk SiC by halide chemical vapor deposition', Materials Science Forum, vol. 457-460, no. I, pp. 87-90.

Growth of bulk SiC by halide chemical vapor deposition. / Fanton, M.; Skowronski, M.; Snyder, D.; Chung, H. J.; Nigam, S.; Weiland, B.; Huh, S. W.

In: Materials Science Forum, Vol. 457-460, No. I, 25.11.2004, p. 87-90.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Growth of bulk SiC by halide chemical vapor deposition

AU - Fanton, M.

AU - Skowronski, M.

AU - Snyder, D.

AU - Chung, H. J.

AU - Nigam, S.

AU - Weiland, B.

AU - Huh, S. W.

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N2 - A novel halide chemical vapor deposition (HCVD) process has been developed for bulk growth of high purity, single crystal 6H SiC. The effects of major process parameters including furnace temperature over the range of 1900-2150°C, reactor pressure over the range of 20-400 torr, reactant concentrations, and flow rates on the growth rate, crystallinity, and electrical properties of the single-crystal 6H boules grown by HCVD are described. Typical growth rates for the 6H polytype are on the order of 100-125 μm/h with a maximum observed rate of 180μm/h. Thicknesses up to 1 mm have been demonstrated. GDMS analyses of the purity of HCVD grown material is discussed and compared to 6H SiC produced by commercial PVT and HTCVD processes. Boron and aluminum concentrations less than 1.8 E15 atoms/cm3 were demonstrated.

AB - A novel halide chemical vapor deposition (HCVD) process has been developed for bulk growth of high purity, single crystal 6H SiC. The effects of major process parameters including furnace temperature over the range of 1900-2150°C, reactor pressure over the range of 20-400 torr, reactant concentrations, and flow rates on the growth rate, crystallinity, and electrical properties of the single-crystal 6H boules grown by HCVD are described. Typical growth rates for the 6H polytype are on the order of 100-125 μm/h with a maximum observed rate of 180μm/h. Thicknesses up to 1 mm have been demonstrated. GDMS analyses of the purity of HCVD grown material is discussed and compared to 6H SiC produced by commercial PVT and HTCVD processes. Boron and aluminum concentrations less than 1.8 E15 atoms/cm3 were demonstrated.

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Fanton M, Skowronski M, Snyder D, Chung HJ, Nigam S, Weiland B et al. Growth of bulk SiC by halide chemical vapor deposition. Materials Science Forum. 2004 Nov 25;457-460(I):87-90.