Growth of carbon nanotubes on GaAs

R. Engel-Herbert, Yukihiko Takagaki, T. Hesjedal

Research output: Contribution to journalArticle

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Abstract

Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs.

Original languageEnglish (US)
Pages (from-to)4631-4634
Number of pages4
JournalMaterials Letters
Volume61
Issue number23-24
DOIs
StatePublished - Sep 1 2007

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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