Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

Nitin Samarth, H. Luo, J. K. Furdyna, S. B. Qadri, Y. R. Lee, A. K. Ramdas, N. Otsuka

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We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 Å, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.

Original languageEnglish (US)
Pages (from-to)2680-2682
Number of pages3
JournalApplied Physics Letters
Issue number26
StatePublished - Dec 1 1989


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Samarth, N., Luo, H., Furdyna, J. K., Qadri, S. B., Lee, Y. R., Ramdas, A. K., & Otsuka, N. (1989). Growth of cubic (zinc blende) CdSe by molecular beam epitaxy. Applied Physics Letters, 54(26), 2680-2682.