We report the growth of cubic (zinc blende) CdSe epilayers on  GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 Å, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1989|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)