Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films

S. Madhavan, D. G. Schlom, A. Dabkowski, H. A. Dabkowska, Ying Liu

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Abstract

Epitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic.

Original languageEnglish (US)
Pages (from-to)559-561
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number4
DOIs
StatePublished - Dec 1 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Madhavan, S., Schlom, D. G., Dabkowski, A., Dabkowska, H. A., & Liu, Y. (1996). Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films. Applied Physics Letters, 68(4), 559-561. https://doi.org/10.1063/1.116399