Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films

S. Madhavan, B. J. Gibbons, A. Dabkowski, H. A. Dabkowska, S. Trolier-McKinstry, Ying Liu, D. G. Schlom

Research output: Contribution to journalConference article

Abstract

Epitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray Φ-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.

Original languageEnglish (US)
Pages (from-to)435-440
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume401
Publication statusPublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Madhavan, S., Gibbons, B. J., Dabkowski, A., Dabkowska, H. A., Trolier-McKinstry, S., Liu, Y., & Schlom, D. G. (1996). Growth of epitaxial a-axis and c-axis oriented Sr2RuO4 films. Materials Research Society Symposium - Proceedings, 401, 435-440.