Growth of epitaxial (Sr, Ba)n+1RunO3n+1 films

D. G. Schlom, S. B. Knapp, S. Wozniak, Ling-nian Zou, J. Park, Ying Liu, M. E. Hawley, G. W. Brown, A. Dabkowski, H. A. Dabkowska, R. Uecker, P. Reiche

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Abstract

We have grown epitaxial (Sr, Ba)n+1RunO3n+1 films, n = 1.2 and ∞, by pulsed laser deposition (PLD) and controlled their orientation by choosing appropriate substrates. The growth conditions yielding phase-pure films have been mapped out. Resistivity versus temperature measurements show that both a-axis and c-axis films of Sr2RuO4 are metallic, but not superconducting. The latter is probably due to the presence of low-level impurities that are difficult to avoid given the target preparation process involved in growing these films by PLD.

Original languageEnglish (US)
Pages (from-to)891-895
Number of pages5
JournalSuperconductor Science and Technology
Volume10
Issue number12
DOIs
StatePublished - Dec 1 1997

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All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Schlom, D. G., Knapp, S. B., Wozniak, S., Zou, L., Park, J., Liu, Y., Hawley, M. E., Brown, G. W., Dabkowski, A., Dabkowska, H. A., Uecker, R., & Reiche, P. (1997). Growth of epitaxial (Sr, Ba)n+1RunO3n+1 films. Superconductor Science and Technology, 10(12), 891-895. https://doi.org/10.1088/0953-2048/10/12/006