Abstract
Thick films of Hg0.8Pb0.2Ba2Ca2Cu3O 8+δ (HgPb1223) superconductor were fabricated by dip-coating Pb0.2Ba2Ca2Cu3O7+δ precursor onto Ag and subsequently reacting in Hg vapor to form the superconducting phase. It was found that by "burying" the films in precursor powder during the reaction, increased HgPb1223 phase purity and increased size of aligned grain colonies were obtained. Such microstructural improvements lead to wider magnetization hysteresis. The optimum superconducting transition temperatures of 133 K were observed in these films. The results showed that this process has a positive influence on the formation and growth of HgPb1223. A pre-pressing process enabled the growth of HgPb1223 grains with relatively dense microstructure and improved connectivity. The resulting films exhibited a transport Jc value of at least 1.5 × 103 A/cm2 at 4.2 K in a zero magnetic field.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3118-3121 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 11 |
| Issue number | 1 III |
| DOIs | |
| State | Published - Mar 1 2001 |
| Event | 2000 Applied Superconductivity Conference - Virginia Beach, VA, United States Duration: Sep 17 2000 → Sep 22 2000 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Growth of Hg0.8Pb0.2Ba2Ca2Cu3O 8+δ thick films on Ag using a modified process route. / Su, Jianhua; Sastry, P. V.P.S.S.; Schwartz, Justin.
In: IEEE Transactions on Applied Superconductivity, Vol. 11, No. 1 III, 01.03.2001, p. 3118-3121.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Growth of Hg0.8Pb0.2Ba2Ca2Cu3O 8+δ thick films on Ag using a modified process route
AU - Su, Jianhua
AU - Sastry, P. V.P.S.S.
AU - Schwartz, Justin
PY - 2001/3/1
Y1 - 2001/3/1
N2 - Thick films of Hg0.8Pb0.2Ba2Ca2Cu3O 8+δ (HgPb1223) superconductor were fabricated by dip-coating Pb0.2Ba2Ca2Cu3O7+δ precursor onto Ag and subsequently reacting in Hg vapor to form the superconducting phase. It was found that by "burying" the films in precursor powder during the reaction, increased HgPb1223 phase purity and increased size of aligned grain colonies were obtained. Such microstructural improvements lead to wider magnetization hysteresis. The optimum superconducting transition temperatures of 133 K were observed in these films. The results showed that this process has a positive influence on the formation and growth of HgPb1223. A pre-pressing process enabled the growth of HgPb1223 grains with relatively dense microstructure and improved connectivity. The resulting films exhibited a transport Jc value of at least 1.5 × 103 A/cm2 at 4.2 K in a zero magnetic field.
AB - Thick films of Hg0.8Pb0.2Ba2Ca2Cu3O 8+δ (HgPb1223) superconductor were fabricated by dip-coating Pb0.2Ba2Ca2Cu3O7+δ precursor onto Ag and subsequently reacting in Hg vapor to form the superconducting phase. It was found that by "burying" the films in precursor powder during the reaction, increased HgPb1223 phase purity and increased size of aligned grain colonies were obtained. Such microstructural improvements lead to wider magnetization hysteresis. The optimum superconducting transition temperatures of 133 K were observed in these films. The results showed that this process has a positive influence on the formation and growth of HgPb1223. A pre-pressing process enabled the growth of HgPb1223 grains with relatively dense microstructure and improved connectivity. The resulting films exhibited a transport Jc value of at least 1.5 × 103 A/cm2 at 4.2 K in a zero magnetic field.
UR - http://www.scopus.com/inward/record.url?scp=0035268399&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035268399&partnerID=8YFLogxK
U2 - 10.1109/77.919723
DO - 10.1109/77.919723
M3 - Conference article
AN - SCOPUS:0035268399
VL - 11
SP - 3118
EP - 3121
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
SN - 1051-8223
IS - 1 III
ER -