Growth of LiNbO3 films on single crystal sapphire substrates using pulsed laser deposition

Y. Gim, K. T. Gahagan, C. Kwon, M. Hawley, V. Gopalan, J. M. Robinson, T. E. Mitchell, Q. X. Jia

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Abstract

We report on the epitaxial growth of LiNbO3 (112̄0) films on sapphire (112̄0) substrates using pulsed laser deposition. We have used a Li-enriched target of Li2NbO3 to compensate for the loss of Li at high deposition temperatures of 600-800 °C. X-ray θ-2θ scans reveal that the crystal orientation of our LiNbO3 films is very sensitive to the deposition temperature and oxygen pressure. To obtain a single (112̄0) orientation, we need to use a deposition temperature of 800 °C and an oxygen pressure of 10-5 Torr. Otherwise, an extra (0001) orientation of LiNbO3 always occurs. From a rocking curve of the (112̄0) peak, we have measured a full width at half maximum of 0.3°, implying that our LiNbO3 (112̄0) film is highly oriented. The measured dielectric constants of the LiNbO3 (0001) and (112̄0) films at 1 MHz are 80 and 70, respectively.

Original languageEnglish (US)
Pages (from-to)91-102
Number of pages12
JournalIntegrated Ferroelectrics
Volume25
Issue number1-4
DOIs
StatePublished - Jan 1 1999

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Gim, Y., Gahagan, K. T., Kwon, C., Hawley, M., Gopalan, V., Robinson, J. M., Mitchell, T. E., & Jia, Q. X. (1999). Growth of LiNbO3 films on single crystal sapphire substrates using pulsed laser deposition. Integrated Ferroelectrics, 25(1-4), 91-102. https://doi.org/10.1080/10584589908210163