Growth of parallel rare-earth silicide nanowire arrays on vicinal Si(001)

Bangzhi Liu, J. Nogami

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

It is possible to produce a parallel array of nanowires by growing thin layers of rare-earth (RE) silicides on a single-domain vicinal Si(001) surface. To achieve this result, the growth of compact silicide islands that generally coexist with the nanowires must be suppressed. Nanowire growth can be optimized by manipulating the growth kinetics, or by judicious choice of the RE metal. Gd appears to grow nanowires over a wider range of conditions than other metals. Some of the differences in behaviour between metals can be related to the biaxial strain in different silicide phases.

Original languageEnglish (US)
Pages (from-to)873-877
Number of pages5
JournalNanotechnology
Volume14
Issue number8
DOIs
StatePublished - Aug 2003

Fingerprint

Rare earths
Nanowires
nanowires
rare earth elements
Rare Earth Metals
Metals
metals
Silicides
silicides
Growth kinetics
kinetics

All Science Journal Classification (ASJC) codes

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

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Growth of parallel rare-earth silicide nanowire arrays on vicinal Si(001). / Liu, Bangzhi; Nogami, J.

In: Nanotechnology, Vol. 14, No. 8, 08.2003, p. 873-877.

Research output: Contribution to journalArticle

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