Growth of quantum fortress structures in Si 1 - xGe x/Si via combinatorial deposition

Thomas E. Vandervelde, Piyush Kumar, Takeshi Kobayashi, Jennifer L. Gray, Tim Pernell, Jerrold A. Floro, Robert Hull, John C. Bean

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

The morphologies that develop when Si 1-xGe x was deposited on Si (001) under kinetically controlled conditions of 550°C growth temperature and 1 Å/s growth rate were described. The first three-dimensional structures that developed to relax the strain in the film were pits. Approximate values for the thickness and Ge fraction for which these structures form were found. The results show that the successive transformations of the surface structure from pits to quantum fortress (QF) to ridges are strain driven.

Original languageEnglish (US)
Pages (from-to)5205-5207
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number25
DOIs
StatePublished - Dec 22 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Vandervelde, T. E., Kumar, P., Kobayashi, T., Gray, J. L., Pernell, T., Floro, J. A., Hull, R., & Bean, J. C. (2003). Growth of quantum fortress structures in Si 1 - xGe x/Si via combinatorial deposition. Applied Physics Letters, 83(25), 5205-5207. https://doi.org/10.1063/1.1636268