Growth of SiC boules with low boron concentration

M. A. Fanton, R. L. Cavalero, R. G. Ray, B. E. Weiland, W. Everson, D. Snyder, R. Gamble, E. Oslosky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effects of growth conditions, diffusion barrier coatings, and hot zone materials on B incorporation in 6H-SiC crystals grown by physical vapor transport (PVT) were evaluated. Development of high purity source material with a B concentration less than 1.8×1015 atoms/cm103, was critical to the growth of boules with a B concentration less than 3.0×1016 atoms/cm103. Application of refractory metal carbide coatings to commercial graphite to serve as boron diffusion barriers and the use of very high purity pyrolytic graphite components ultimately led to the growth of SiC boules with boron concentrations as low as 2.4×1015 atoms/cm3. The effect of growth temperature and pressure were closely examined over a range from 2100°C to 2300°C and 5 to 13.5 Torr. This range of growth conditions and growth rates had no effect on B incorporation. Attempts to alter the gas phase stoichiometry through addition of hydrogen gas to the growth environment also had no impact on B incorporation. These results are explained by considering site competition effects and the ability of B to diffuse through the graphite growth cell components.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages47-50
Number of pages4
EditionPART 1
StatePublished - Dec 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

boules
Boron
boron
Graphite
Diffusion barriers
Atoms
Gases
Coatings
Refractory metals
Cell growth
Growth temperature
purity
graphite
Stoichiometry
Carbides
Hydrogen
atoms
coatings
refractory metals
Vapors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Fanton, M. A., Cavalero, R. L., Ray, R. G., Weiland, B. E., Everson, W., Snyder, D., ... Oslosky, E. (2006). Growth of SiC boules with low boron concentration. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 47-50). (Materials Science Forum; Vol. 527-529, No. PART 1).
Fanton, M. A. ; Cavalero, R. L. ; Ray, R. G. ; Weiland, B. E. ; Everson, W. ; Snyder, D. ; Gamble, R. ; Oslosky, E. / Growth of SiC boules with low boron concentration. Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. pp. 47-50 (Materials Science Forum; PART 1).
@inproceedings{5b0fd46cf4e7479996a4863994ea3a3a,
title = "Growth of SiC boules with low boron concentration",
abstract = "The effects of growth conditions, diffusion barrier coatings, and hot zone materials on B incorporation in 6H-SiC crystals grown by physical vapor transport (PVT) were evaluated. Development of high purity source material with a B concentration less than 1.8×1015 atoms/cm103, was critical to the growth of boules with a B concentration less than 3.0×1016 atoms/cm103. Application of refractory metal carbide coatings to commercial graphite to serve as boron diffusion barriers and the use of very high purity pyrolytic graphite components ultimately led to the growth of SiC boules with boron concentrations as low as 2.4×1015 atoms/cm3. The effect of growth temperature and pressure were closely examined over a range from 2100°C to 2300°C and 5 to 13.5 Torr. This range of growth conditions and growth rates had no effect on B incorporation. Attempts to alter the gas phase stoichiometry through addition of hydrogen gas to the growth environment also had no impact on B incorporation. These results are explained by considering site competition effects and the ability of B to diffuse through the graphite growth cell components.",
author = "Fanton, {M. A.} and Cavalero, {R. L.} and Ray, {R. G.} and Weiland, {B. E.} and W. Everson and D. Snyder and R. Gamble and E. Oslosky",
year = "2006",
month = "12",
day = "1",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
number = "PART 1",
pages = "47--50",
booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",
edition = "PART 1",

}

Fanton, MA, Cavalero, RL, Ray, RG, Weiland, BE, Everson, W, Snyder, D, Gamble, R & Oslosky, E 2006, Growth of SiC boules with low boron concentration. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, pp. 47-50, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.

Growth of SiC boules with low boron concentration. / Fanton, M. A.; Cavalero, R. L.; Ray, R. G.; Weiland, B. E.; Everson, W.; Snyder, D.; Gamble, R.; Oslosky, E.

Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. p. 47-50 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Growth of SiC boules with low boron concentration

AU - Fanton, M. A.

AU - Cavalero, R. L.

AU - Ray, R. G.

AU - Weiland, B. E.

AU - Everson, W.

AU - Snyder, D.

AU - Gamble, R.

AU - Oslosky, E.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - The effects of growth conditions, diffusion barrier coatings, and hot zone materials on B incorporation in 6H-SiC crystals grown by physical vapor transport (PVT) were evaluated. Development of high purity source material with a B concentration less than 1.8×1015 atoms/cm103, was critical to the growth of boules with a B concentration less than 3.0×1016 atoms/cm103. Application of refractory metal carbide coatings to commercial graphite to serve as boron diffusion barriers and the use of very high purity pyrolytic graphite components ultimately led to the growth of SiC boules with boron concentrations as low as 2.4×1015 atoms/cm3. The effect of growth temperature and pressure were closely examined over a range from 2100°C to 2300°C and 5 to 13.5 Torr. This range of growth conditions and growth rates had no effect on B incorporation. Attempts to alter the gas phase stoichiometry through addition of hydrogen gas to the growth environment also had no impact on B incorporation. These results are explained by considering site competition effects and the ability of B to diffuse through the graphite growth cell components.

AB - The effects of growth conditions, diffusion barrier coatings, and hot zone materials on B incorporation in 6H-SiC crystals grown by physical vapor transport (PVT) were evaluated. Development of high purity source material with a B concentration less than 1.8×1015 atoms/cm103, was critical to the growth of boules with a B concentration less than 3.0×1016 atoms/cm103. Application of refractory metal carbide coatings to commercial graphite to serve as boron diffusion barriers and the use of very high purity pyrolytic graphite components ultimately led to the growth of SiC boules with boron concentrations as low as 2.4×1015 atoms/cm3. The effect of growth temperature and pressure were closely examined over a range from 2100°C to 2300°C and 5 to 13.5 Torr. This range of growth conditions and growth rates had no effect on B incorporation. Attempts to alter the gas phase stoichiometry through addition of hydrogen gas to the growth environment also had no impact on B incorporation. These results are explained by considering site competition effects and the ability of B to diffuse through the graphite growth cell components.

UR - http://www.scopus.com/inward/record.url?scp=37849024884&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37849024884&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:37849024884

SN - 9780878494255

T3 - Materials Science Forum

SP - 47

EP - 50

BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005

ER -

Fanton MA, Cavalero RL, Ray RG, Weiland BE, Everson W, Snyder D et al. Growth of SiC boules with low boron concentration. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. 2006. p. 47-50. (Materials Science Forum; PART 1).