Growth of SiC boules with low boron concentration

M. A. Fanton, R. L. Cavalero, R. G. Ray, B. E. Weiland, W. Everson, D. Snyder, R. Gamble, E. Oslosky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The effects of growth conditions, diffusion barrier coatings, and hot zone materials on B incorporation in 6H-SiC crystals grown by physical vapor transport (PVT) were evaluated. Development of high purity source material with a B concentration less than 1.8×1015 atoms/cm103, was critical to the growth of boules with a B concentration less than 3.0×1016 atoms/cm103. Application of refractory metal carbide coatings to commercial graphite to serve as boron diffusion barriers and the use of very high purity pyrolytic graphite components ultimately led to the growth of SiC boules with boron concentrations as low as 2.4×1015 atoms/cm3. The effect of growth temperature and pressure were closely examined over a range from 2100°C to 2300°C and 5 to 13.5 Torr. This range of growth conditions and growth rates had no effect on B incorporation. Attempts to alter the gas phase stoichiometry through addition of hydrogen gas to the growth environment also had no impact on B incorporation. These results are explained by considering site competition effects and the ability of B to diffuse through the graphite growth cell components.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Pages47-50
Number of pages4
EditionPART 1
ISBN (Print)9780878494255
DOIs
StatePublished - Jan 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Fanton, M. A., Cavalero, R. L., Ray, R. G., Weiland, B. E., Everson, W., Snyder, D., Gamble, R., & Oslosky, E. (2006). Growth of SiC boules with low boron concentration. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 47-50). (Materials Science Forum; Vol. 527-529, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.47