Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition

Daniel R. Lamborn, Rudeger H T Wilke, Qi Li, Aoxing Xi, David W. Snyder, Joan Marie Redwing

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Hybrid physical-chemical vapor deposition (HPCVD) process was used for the deposition of MgB2 thin film. HPCVD process combined the thermal decomposition of diborane (B2H6) gas and the evaporation of Mg metal to provide sufficient Mg overpressure to maintain MgB2 phase stability at elevated temperature. The HPCVD-grown thin films was shown to be epitaxially oriented on SiC and sapphire single-crystal substrates with root-mean-square (RMS) roughness. A high superconductor fraction in the wire or tape cross-section and a thick superconductor coating was required to have a high engineering critical current density over the cross-sectional area on the entire wire. Experimental results showed that the thick MgB2 films were dense and polycrystalline with a preferred orientation. High current density values were obtained for undoped samples with thicknesses up to 10 μm and showed little degradation compared to results for thin films.

Original languageEnglish (US)
Pages (from-to)319-323
Number of pages5
JournalAdvanced Materials
Volume20
Issue number2
DOIs
StatePublished - Jan 18 2008

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Physical vapor deposition
Thick films
Chemical vapor deposition
Thin films
Superconducting materials
Wire
Phase stability
Aluminum Oxide
Sapphire
Tapes
Evaporation
Pyrolysis
Current density
Gases
Surface roughness
Metals
Single crystals
Degradation
Coatings
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{b18f577794a44236b6c82ebd8d943b8c,
title = "Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition",
abstract = "Hybrid physical-chemical vapor deposition (HPCVD) process was used for the deposition of MgB2 thin film. HPCVD process combined the thermal decomposition of diborane (B2H6) gas and the evaporation of Mg metal to provide sufficient Mg overpressure to maintain MgB2 phase stability at elevated temperature. The HPCVD-grown thin films was shown to be epitaxially oriented on SiC and sapphire single-crystal substrates with root-mean-square (RMS) roughness. A high superconductor fraction in the wire or tape cross-section and a thick superconductor coating was required to have a high engineering critical current density over the cross-sectional area on the entire wire. Experimental results showed that the thick MgB2 films were dense and polycrystalline with a preferred orientation. High current density values were obtained for undoped samples with thicknesses up to 10 μm and showed little degradation compared to results for thin films.",
author = "Lamborn, {Daniel R.} and Wilke, {Rudeger H T} and Qi Li and Aoxing Xi and Snyder, {David W.} and Redwing, {Joan Marie}",
year = "2008",
month = "1",
day = "18",
doi = "10.1002/adma.200701835",
language = "English (US)",
volume = "20",
pages = "319--323",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "2",

}

Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition. / Lamborn, Daniel R.; Wilke, Rudeger H T; Li, Qi; Xi, Aoxing; Snyder, David W.; Redwing, Joan Marie.

In: Advanced Materials, Vol. 20, No. 2, 18.01.2008, p. 319-323.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition

AU - Lamborn, Daniel R.

AU - Wilke, Rudeger H T

AU - Li, Qi

AU - Xi, Aoxing

AU - Snyder, David W.

AU - Redwing, Joan Marie

PY - 2008/1/18

Y1 - 2008/1/18

N2 - Hybrid physical-chemical vapor deposition (HPCVD) process was used for the deposition of MgB2 thin film. HPCVD process combined the thermal decomposition of diborane (B2H6) gas and the evaporation of Mg metal to provide sufficient Mg overpressure to maintain MgB2 phase stability at elevated temperature. The HPCVD-grown thin films was shown to be epitaxially oriented on SiC and sapphire single-crystal substrates with root-mean-square (RMS) roughness. A high superconductor fraction in the wire or tape cross-section and a thick superconductor coating was required to have a high engineering critical current density over the cross-sectional area on the entire wire. Experimental results showed that the thick MgB2 films were dense and polycrystalline with a preferred orientation. High current density values were obtained for undoped samples with thicknesses up to 10 μm and showed little degradation compared to results for thin films.

AB - Hybrid physical-chemical vapor deposition (HPCVD) process was used for the deposition of MgB2 thin film. HPCVD process combined the thermal decomposition of diborane (B2H6) gas and the evaporation of Mg metal to provide sufficient Mg overpressure to maintain MgB2 phase stability at elevated temperature. The HPCVD-grown thin films was shown to be epitaxially oriented on SiC and sapphire single-crystal substrates with root-mean-square (RMS) roughness. A high superconductor fraction in the wire or tape cross-section and a thick superconductor coating was required to have a high engineering critical current density over the cross-sectional area on the entire wire. Experimental results showed that the thick MgB2 films were dense and polycrystalline with a preferred orientation. High current density values were obtained for undoped samples with thicknesses up to 10 μm and showed little degradation compared to results for thin films.

UR - http://www.scopus.com/inward/record.url?scp=38849099639&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38849099639&partnerID=8YFLogxK

U2 - 10.1002/adma.200701835

DO - 10.1002/adma.200701835

M3 - Article

VL - 20

SP - 319

EP - 323

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 2

ER -