Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED

N. Pryds, Darrell Cockburn, K. Rodrigo, I. L. Rasmussen, J. Knudsen, J. Schou

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films is produced by PLD directly from a TiN target. At the initial stage of the growth (average thickness ∼2.4 nm) the formation of islands is observed. During the continuous growth the islands merge into a smooth surface as indicated by the RHEED, atomic force microscopy and field emission scanning electron microscopy. These observations are in good agreement with the three-dimensional Volmer-Weber growth type, by which three-dimensional crystallites are formed and later cause a continuous surface roughening. This leads to an exponential decrease in the intensity of the specular spot in the RHEED pattern as well.

Original languageEnglish (US)
Pages (from-to)705-710
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume93
Issue number3
DOIs
StatePublished - Nov 1 2008

Fingerprint

Reflection high energy electron diffraction
Titanium nitride
Thin films
Pulsed laser deposition
Crystallites
Field emission
Diffraction patterns
Atomic force microscopy
titanium nitride
Single crystals
Scanning electron microscopy
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Pryds, N. ; Cockburn, Darrell ; Rodrigo, K. ; Rasmussen, I. L. ; Knudsen, J. ; Schou, J. / Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED. In: Applied Physics A: Materials Science and Processing. 2008 ; Vol. 93, No. 3. pp. 705-710.
@article{cbd55fa669674864a6848d0bf9537b73,
title = "Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED",
abstract = "Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films is produced by PLD directly from a TiN target. At the initial stage of the growth (average thickness ∼2.4 nm) the formation of islands is observed. During the continuous growth the islands merge into a smooth surface as indicated by the RHEED, atomic force microscopy and field emission scanning electron microscopy. These observations are in good agreement with the three-dimensional Volmer-Weber growth type, by which three-dimensional crystallites are formed and later cause a continuous surface roughening. This leads to an exponential decrease in the intensity of the specular spot in the RHEED pattern as well.",
author = "N. Pryds and Darrell Cockburn and K. Rodrigo and Rasmussen, {I. L.} and J. Knudsen and J. Schou",
year = "2008",
month = "11",
day = "1",
doi = "10.1007/s00339-008-4700-2",
language = "English (US)",
volume = "93",
pages = "705--710",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
publisher = "Springer Heidelberg",
number = "3",

}

Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED. / Pryds, N.; Cockburn, Darrell; Rodrigo, K.; Rasmussen, I. L.; Knudsen, J.; Schou, J.

In: Applied Physics A: Materials Science and Processing, Vol. 93, No. 3, 01.11.2008, p. 705-710.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED

AU - Pryds, N.

AU - Cockburn, Darrell

AU - Rodrigo, K.

AU - Rasmussen, I. L.

AU - Knudsen, J.

AU - Schou, J.

PY - 2008/11/1

Y1 - 2008/11/1

N2 - Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films is produced by PLD directly from a TiN target. At the initial stage of the growth (average thickness ∼2.4 nm) the formation of islands is observed. During the continuous growth the islands merge into a smooth surface as indicated by the RHEED, atomic force microscopy and field emission scanning electron microscopy. These observations are in good agreement with the three-dimensional Volmer-Weber growth type, by which three-dimensional crystallites are formed and later cause a continuous surface roughening. This leads to an exponential decrease in the intensity of the specular spot in the RHEED pattern as well.

AB - Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films is produced by PLD directly from a TiN target. At the initial stage of the growth (average thickness ∼2.4 nm) the formation of islands is observed. During the continuous growth the islands merge into a smooth surface as indicated by the RHEED, atomic force microscopy and field emission scanning electron microscopy. These observations are in good agreement with the three-dimensional Volmer-Weber growth type, by which three-dimensional crystallites are formed and later cause a continuous surface roughening. This leads to an exponential decrease in the intensity of the specular spot in the RHEED pattern as well.

UR - http://www.scopus.com/inward/record.url?scp=54949106143&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54949106143&partnerID=8YFLogxK

U2 - 10.1007/s00339-008-4700-2

DO - 10.1007/s00339-008-4700-2

M3 - Article

VL - 93

SP - 705

EP - 710

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 3

ER -