Hall and field-effect mobilities in few layered p-WSe 2 field-effect transistors

N. R. Pradhan, D. Rhodes, S. Memaran, J. M. Poumirol, D. Smirnov, S. Talapatra, S. Feng, N. Perea-Lopez, A. L. Elias, M. Terrones, P. M. Ajayan, L. Balicas

Research output: Contribution to journalArticle

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Abstract

Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfoliated onto SiO2. Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm2 /Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm2 /Vs as T is lowered below ∼150 K, indicating that insofar WSe2 -based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe2 and SiO2. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe2-based FETs displaying higher room temperature mobilities, i.e. approaching those of p-doped Si, which would make it a suitable candidate for high performance opto-electronics.

Original languageEnglish (US)
Article numbersrep08979
JournalScientific reports
Volume5
DOIs
StatePublished - Mar 11 2015

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Temperature
Metals

All Science Journal Classification (ASJC) codes

  • General

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Pradhan, N. R., Rhodes, D., Memaran, S., Poumirol, J. M., Smirnov, D., Talapatra, S., ... Balicas, L. (2015). Hall and field-effect mobilities in few layered p-WSe 2 field-effect transistors. Scientific reports, 5, [srep08979]. https://doi.org/10.1038/srep08979
Pradhan, N. R. ; Rhodes, D. ; Memaran, S. ; Poumirol, J. M. ; Smirnov, D. ; Talapatra, S. ; Feng, S. ; Perea-Lopez, N. ; Elias, A. L. ; Terrones, M. ; Ajayan, P. M. ; Balicas, L. / Hall and field-effect mobilities in few layered p-WSe 2 field-effect transistors. In: Scientific reports. 2015 ; Vol. 5.
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Pradhan, NR, Rhodes, D, Memaran, S, Poumirol, JM, Smirnov, D, Talapatra, S, Feng, S, Perea-Lopez, N, Elias, AL, Terrones, M, Ajayan, PM & Balicas, L 2015, 'Hall and field-effect mobilities in few layered p-WSe 2 field-effect transistors', Scientific reports, vol. 5, srep08979. https://doi.org/10.1038/srep08979

Hall and field-effect mobilities in few layered p-WSe 2 field-effect transistors. / Pradhan, N. R.; Rhodes, D.; Memaran, S.; Poumirol, J. M.; Smirnov, D.; Talapatra, S.; Feng, S.; Perea-Lopez, N.; Elias, A. L.; Terrones, M.; Ajayan, P. M.; Balicas, L.

In: Scientific reports, Vol. 5, srep08979, 11.03.2015.

Research output: Contribution to journalArticle

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T1 - Hall and field-effect mobilities in few layered p-WSe 2 field-effect transistors

AU - Pradhan, N. R.

AU - Rhodes, D.

AU - Memaran, S.

AU - Poumirol, J. M.

AU - Smirnov, D.

AU - Talapatra, S.

AU - Feng, S.

AU - Perea-Lopez, N.

AU - Elias, A. L.

AU - Terrones, M.

AU - Ajayan, P. M.

AU - Balicas, L.

PY - 2015/3/11

Y1 - 2015/3/11

N2 - Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfoliated onto SiO2. Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm2 /Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm2 /Vs as T is lowered below ∼150 K, indicating that insofar WSe2 -based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe2 and SiO2. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe2-based FETs displaying higher room temperature mobilities, i.e. approaching those of p-doped Si, which would make it a suitable candidate for high performance opto-electronics.

AB - Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfoliated onto SiO2. Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm2 /Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm2 /Vs as T is lowered below ∼150 K, indicating that insofar WSe2 -based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe2 and SiO2. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe2-based FETs displaying higher room temperature mobilities, i.e. approaching those of p-doped Si, which would make it a suitable candidate for high performance opto-electronics.

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Pradhan NR, Rhodes D, Memaran S, Poumirol JM, Smirnov D, Talapatra S et al. Hall and field-effect mobilities in few layered p-WSe 2 field-effect transistors. Scientific reports. 2015 Mar 11;5. srep08979. https://doi.org/10.1038/srep08979