Hall effect and dielectric properties of Mn-doped barium titanate

Xiang Wang, Min Gu, Bin Yang, Shining Zhu, Wenwu Cao

Research output: Contribution to journalConference article

46 Citations (Scopus)

Abstract

BaMnxTi1-xO3 (0≤x≤0.01) ceramics have been prepared using a sol-gel method. The Hall coefficient, leakage conductance and dielectric constant were measured. The Hall effect confirms that the charge carriers of the ceramics are electrons, and the electronic concentration n=1/|eR| decreases with increasing Mn concentration. We propose that Mn3+ and Mn4+ substitution of Ti can partially trap the conductance electrons. The dielectric constant ε1 of the pellets exhibited a peak at Tc∼110°C upon heating and the height and position of this peak depends on the Mn concentration. The Mn2+ incorporated in the oxygen octahedron of the BaTiO3 unit cell is in a more centered position than Ti4+ and may, therefore, modify considerably the ferroelectric property.

Original languageEnglish (US)
Pages (from-to)855-859
Number of pages5
JournalMicroelectronic Engineering
Volume66
Issue number1-4
DOIs
StatePublished - Apr 1 2003
EventIUMRS-ICEM 2002 - Xi an, China
Duration: Jun 10 2002Jun 14 2002

Fingerprint

Barium titanate
Hall effect
Dielectric properties
barium
dielectric properties
Permittivity
Electrons
Charge carriers
ceramics
permittivity
Sol-gel process
Ferroelectric materials
Substitution reactions
Oxygen
Heating
pellets
charge carriers
leakage
electrons
traps

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Wang, Xiang ; Gu, Min ; Yang, Bin ; Zhu, Shining ; Cao, Wenwu. / Hall effect and dielectric properties of Mn-doped barium titanate. In: Microelectronic Engineering. 2003 ; Vol. 66, No. 1-4. pp. 855-859.
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Hall effect and dielectric properties of Mn-doped barium titanate. / Wang, Xiang; Gu, Min; Yang, Bin; Zhu, Shining; Cao, Wenwu.

In: Microelectronic Engineering, Vol. 66, No. 1-4, 01.04.2003, p. 855-859.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Hall effect and dielectric properties of Mn-doped barium titanate

AU - Wang, Xiang

AU - Gu, Min

AU - Yang, Bin

AU - Zhu, Shining

AU - Cao, Wenwu

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N2 - BaMnxTi1-xO3 (0≤x≤0.01) ceramics have been prepared using a sol-gel method. The Hall coefficient, leakage conductance and dielectric constant were measured. The Hall effect confirms that the charge carriers of the ceramics are electrons, and the electronic concentration n=1/|eR| decreases with increasing Mn concentration. We propose that Mn3+ and Mn4+ substitution of Ti can partially trap the conductance electrons. The dielectric constant ε1 of the pellets exhibited a peak at Tc∼110°C upon heating and the height and position of this peak depends on the Mn concentration. The Mn2+ incorporated in the oxygen octahedron of the BaTiO3 unit cell is in a more centered position than Ti4+ and may, therefore, modify considerably the ferroelectric property.

AB - BaMnxTi1-xO3 (0≤x≤0.01) ceramics have been prepared using a sol-gel method. The Hall coefficient, leakage conductance and dielectric constant were measured. The Hall effect confirms that the charge carriers of the ceramics are electrons, and the electronic concentration n=1/|eR| decreases with increasing Mn concentration. We propose that Mn3+ and Mn4+ substitution of Ti can partially trap the conductance electrons. The dielectric constant ε1 of the pellets exhibited a peak at Tc∼110°C upon heating and the height and position of this peak depends on the Mn concentration. The Mn2+ incorporated in the oxygen octahedron of the BaTiO3 unit cell is in a more centered position than Ti4+ and may, therefore, modify considerably the ferroelectric property.

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