Hanle effect measurements of spin lifetime in Zn0.4Cd 0.6Se epilayers grown on InP

O. Maksimov, H. Lu, M. Muñoz, M. C. Tamargo, N. Samarth

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We use the Hanle effect to study spin relaxation in ZnxCd 1-xSe epilayers grown on lattice-matched InP substrates. We study three samples with a fixed composition (x = 0.4) and with varying levels of n-doping, as well as an undoped sample with x = 0.5. Our measurements show that the spin relaxation time changes non-monotonically as a function of carrier density, with a maximum transverse spin lifetime of ∼10.5 ns at low temperatures for a sample doped near the metal-insulator transition.

Original languageEnglish (US)
Pages (from-to)195-199
Number of pages5
JournalJournal of Superconductivity and Novel Magnetism
Volume18
Issue number2
DOIs
StatePublished - Dec 1 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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