Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots

O. Maksimov, X. Zhou, M. C. Tamargo, Nitin Samarth

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We use the Hanle effect to study spin relaxation in self-assembled CdSe quantum dots embedded in a Be0.03 Zn0.97 Se matrix. We measure a short transverse spin lifetime in the sub nanosecond range (0.31-0.35 ns) at 4.2 K. We propose that strong phonon and/or impurity scattering, due to unintentional contamination, limit the spin coherence time in CdSe / Be0.03 Zn0.97 Se QDs.

Original languageEnglish (US)
Pages (from-to)399-402
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume32
Issue number1-2 SPEC. ISS.
DOIs
StatePublished - May 1 2006

Fingerprint

Semiconductor quantum dots
Contamination
quantum dots
Scattering
Impurities
contamination
life (durability)
impurities
matrices
scattering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

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Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots. / Maksimov, O.; Zhou, X.; Tamargo, M. C.; Samarth, Nitin.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 32, No. 1-2 SPEC. ISS., 01.05.2006, p. 399-402.

Research output: Contribution to journalArticle

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