Hardening process for plasma deposited planar amorphous carbon films used in bilayer resists

S. W. Pang, R. B. Goodman, Mark William Horn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A dry planarization process has been developed to produce planar amorphous carbon (a-C:H) films. These films provide a high degree of planarization over large distances, and they can be deposited at room temperature with low ion bombardment energy (10 V) and high deposition rate (300 nm/min). Depending on the deposition conditions and subsequent processing requirements, a hardening step may be needed. Various degrees of hardness can be obtained by heating the samples and/or exposing them to a low-power plasma. One effective hardening process is to expose the films to a low-power N2 discharge (5-mW/cm2 RF power and -10-V DC bias voltage) at 150°C and 500 mtorr for 30 min. Excimer laser projection lithography has been used to define submicrometer patterns in bilayers which consist of a wet or dry deposited inorganic photoresist applied on top of the planarization layers.

Original languageEnglish (US)
Title of host publicationProceedings - International IEEE VLSI Multilevel Interconnection Conference
PublisherPubl by IEEE
Pages435-437
Number of pages3
StatePublished - 1990
Event1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
Duration: Jun 12 1990Jun 13 1990

Other

Other1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference
CitySanta Clara, CA, USA
Period6/12/906/13/90

Fingerprint

Carbon films
Amorphous carbon
Amorphous films
Hardening
Plasmas
Excimer lasers
Photoresists
Ion bombardment
Bias voltage
Deposition rates
Lithography
Hardness
Heating
Processing
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Pang, S. W., Goodman, R. B., & Horn, M. W. (1990). Hardening process for plasma deposited planar amorphous carbon films used in bilayer resists. In Proceedings - International IEEE VLSI Multilevel Interconnection Conference (pp. 435-437). Publ by IEEE.
Pang, S. W. ; Goodman, R. B. ; Horn, Mark William. / Hardening process for plasma deposited planar amorphous carbon films used in bilayer resists. Proceedings - International IEEE VLSI Multilevel Interconnection Conference. Publ by IEEE, 1990. pp. 435-437
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Pang, SW, Goodman, RB & Horn, MW 1990, Hardening process for plasma deposited planar amorphous carbon films used in bilayer resists. in Proceedings - International IEEE VLSI Multilevel Interconnection Conference. Publ by IEEE, pp. 435-437, 1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference, Santa Clara, CA, USA, 6/12/90.

Hardening process for plasma deposited planar amorphous carbon films used in bilayer resists. / Pang, S. W.; Goodman, R. B.; Horn, Mark William.

Proceedings - International IEEE VLSI Multilevel Interconnection Conference. Publ by IEEE, 1990. p. 435-437.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Pang SW, Goodman RB, Horn MW. Hardening process for plasma deposited planar amorphous carbon films used in bilayer resists. In Proceedings - International IEEE VLSI Multilevel Interconnection Conference. Publ by IEEE. 1990. p. 435-437