Harmonic enhancement of Gunn oscillations in GaN

C. Sevik, D. E. Yilmaz, C. Bulutay

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages231-232
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Sevik, C., Yilmaz, D. E., & Bulutay, C. (2005). Harmonic enhancement of Gunn oscillations in GaN. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 231-232). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994078