He- induced nanocavities for the gettering of metallic impurities in silicon

E. Ntsoenzok, R. Delamare, D. Alquier, C. L. Liu, S. Ashok, M. O. Ruault

Research output: Contribution to conferencePaperpeer-review

Abstract

Nanocavities were formed in Si by implanting He at different depths: 100 nm (10 keV), 400 nm (50 keV), 1000 nm (160 keV) and 5700 nm (1,55 MeV) according to transport of ions in matter (TRIM) simulation. Different doses were used. After implantation, some samples were subsequently treated by hydrogen plasma. Regarding the depth dependence of cavity geometry, the most important result is that there is no faceting of cavities for the lowest depth while a clear faceting is observed for the higher depths. Also H plasma treatment is found speed up the growth of cavities.

Original languageEnglish (US)
Pages202-207
Number of pages6
StatePublished - Dec 1 2004
EventHigh Purity Silicon VIII - Proceedings of the International Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherHigh Purity Silicon VIII - Proceedings of the International Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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