Helium implant depth dependence on thermal growth of nanocavities in silicon

E. Ntsoenzok, S Ashok, G. Regula, B. Pichaud

Research output: Contribution to conferencePaper

Abstract

Silicon samples were implanted with both 50 keV and 1.55 MeV 3He ions and annealed at different temperatures. The thermal growth of cavities was performed using transmission electron microscopy (TEM) measurements. Results show a significant difference in the formation and growth of cavities. Implantation of 50 keV ions to a total dose of 2.83 × 10 16 He/cm2 results in the unexpected formation of platelets when the annealing temperature is 400°C, while sample implanted with 1.55 MeV at an equivalent helium concentration (5×10 16He/cm2) gives rise to spherical cavities after the same thermal treatment.

Original languageEnglish (US)
Pages2382-2386
Number of pages5
Publication statusPublished - Dec 1 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: Oct 18 2004Oct 21 2004

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period10/18/0410/21/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Ntsoenzok, E., Ashok, S., Regula, G., & Pichaud, B. (2004). Helium implant depth dependence on thermal growth of nanocavities in silicon. 2382-2386. Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.