Helium-induced nanocavities in silicon

Formation and properties

Sanjay Rangan, S Ashok, G. Chen, D. Theodore

Research output: Contribution to journalConference article

Abstract

Nanocavities in Si formed by He ion implantation and anneal are of interest for impurity gettering and localized lifetime control, an in layer splitting techniques used in wafer bonding. With sequential thermal anneal following cascade He implantation (40-160 keV, 2 × 1015 - 4 × 1016 cm-2) we have obtained multiple cavity layers. Transmission electron microscopy data reveal that, under isothermal anneal, the cavity shape changes from a distinct, aligned hexagonal geometry to a rounded spheroidal shape with increasing anneal time. Deep level transient spectroscopy (DLTS) measurements of the cavity region show broad minority carrier (electron in p-type Si) peaks indicative of the presence of defect clusters. Unusual capacitance-temperature (C-T) characteristics with steps and hysterisis are also seen, reflecting metastable behavior arising from change in structural configuration of the cavity defects.

Original languageEnglish (US)
Pages (from-to)255-261
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4746 I
StatePublished - Jan 1 2002
EventPhysics of Semiconductor Devices - Delhi, India
Duration: Dec 11 2001Dec 15 2001

Fingerprint

Helium
Silicon
Cavity
helium
Wafer bonding
Defects
cavities
Deep level transient spectroscopy
silicon
Ion implantation
Capacitance
Impurities
Transmission electron microscopy
Ion Implantation
Implantation
Geometry
Electrons
defects
Transmission Electron Microscopy
minority carriers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Rangan, Sanjay ; Ashok, S ; Chen, G. ; Theodore, D. / Helium-induced nanocavities in silicon : Formation and properties. In: Proceedings of SPIE - The International Society for Optical Engineering. 2002 ; Vol. 4746 I. pp. 255-261.
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Helium-induced nanocavities in silicon : Formation and properties. / Rangan, Sanjay; Ashok, S; Chen, G.; Theodore, D.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4746 I, 01.01.2002, p. 255-261.

Research output: Contribution to journalConference article

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AU - Theodore, D.

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