Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates

Jarod C. Gagnon, Haoting Shen, Yu Yuwen, Ke Wang, Theresa S. Mayer, Joan M. Redwing

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A maskless Si trench structure was developed to integrate crystallographically non-polar GaN microstructures with semi-polar facets on Si(001). GaN "fins" were preferentially grown by MOCVD on Si{110} trench sidewalls formed by deep reactive ion etching (DRIE) of Si(001) such that GaN(0001)//Si{110} and GaN(10-10)//Si(001), resulting in a non-polar crystal structure with respect to the Si(001) substrate surface. No masking layer was required to prevent GaN growth on the Si(001) top surface of the trenches, instead, it was found that GaN nucleated preferentially on the Si{110} trench sidewalls. GaN was also observed to nucleate at the top corner of the trenches due to Si etching and exposure of high-index Si facets during the pre-growth H2 anneal. This undesired GaN nucleation was successfully suppressed by reducing the H2 anneal time and/or increasing the growth temperature and decreasing the precursor V/III to enhance Ga-adatom diffusion. Cross-sectional TEM studies confirmed that the GaN fins were crystallographically non-polar with respect to the Si(001) substrate surface and were bounded by semi-polar and non-polar facets. The reported Si fabrication and GaN growth process shows promise for the integration of non-polar and semi-polar GaN microstructures on industry standard Si(001) substrates.

Original languageEnglish (US)
Pages (from-to)1-6
Number of pages6
JournalJournal of Crystal Growth
Volume446
DOIs
StatePublished - Jul 15 2016

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Epitaxial growth
flat surfaces
fins
Substrates
Microstructure
Adatoms
Reactive ion etching
Metallorganic chemical vapor deposition
etching
Growth temperature
microstructure
Etching
Nucleation
masking
Crystal structure
adatoms
Transmission electron microscopy
metalorganic chemical vapor deposition
Fabrication
industries

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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title = "Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates",
abstract = "A maskless Si trench structure was developed to integrate crystallographically non-polar GaN microstructures with semi-polar facets on Si(001). GaN {"}fins{"} were preferentially grown by MOCVD on Si{110} trench sidewalls formed by deep reactive ion etching (DRIE) of Si(001) such that GaN(0001)//Si{110} and GaN(10-10)//Si(001), resulting in a non-polar crystal structure with respect to the Si(001) substrate surface. No masking layer was required to prevent GaN growth on the Si(001) top surface of the trenches, instead, it was found that GaN nucleated preferentially on the Si{110} trench sidewalls. GaN was also observed to nucleate at the top corner of the trenches due to Si etching and exposure of high-index Si facets during the pre-growth H2 anneal. This undesired GaN nucleation was successfully suppressed by reducing the H2 anneal time and/or increasing the growth temperature and decreasing the precursor V/III to enhance Ga-adatom diffusion. Cross-sectional TEM studies confirmed that the GaN fins were crystallographically non-polar with respect to the Si(001) substrate surface and were bounded by semi-polar and non-polar facets. The reported Si fabrication and GaN growth process shows promise for the integration of non-polar and semi-polar GaN microstructures on industry standard Si(001) substrates.",
author = "Gagnon, {Jarod C.} and Haoting Shen and Yu Yuwen and Ke Wang and Mayer, {Theresa S.} and Redwing, {Joan M.}",
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Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates. / Gagnon, Jarod C.; Shen, Haoting; Yuwen, Yu; Wang, Ke; Mayer, Theresa S.; Redwing, Joan M.

In: Journal of Crystal Growth, Vol. 446, 15.07.2016, p. 1-6.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates

AU - Gagnon, Jarod C.

AU - Shen, Haoting

AU - Yuwen, Yu

AU - Wang, Ke

AU - Mayer, Theresa S.

AU - Redwing, Joan M.

PY - 2016/7/15

Y1 - 2016/7/15

N2 - A maskless Si trench structure was developed to integrate crystallographically non-polar GaN microstructures with semi-polar facets on Si(001). GaN "fins" were preferentially grown by MOCVD on Si{110} trench sidewalls formed by deep reactive ion etching (DRIE) of Si(001) such that GaN(0001)//Si{110} and GaN(10-10)//Si(001), resulting in a non-polar crystal structure with respect to the Si(001) substrate surface. No masking layer was required to prevent GaN growth on the Si(001) top surface of the trenches, instead, it was found that GaN nucleated preferentially on the Si{110} trench sidewalls. GaN was also observed to nucleate at the top corner of the trenches due to Si etching and exposure of high-index Si facets during the pre-growth H2 anneal. This undesired GaN nucleation was successfully suppressed by reducing the H2 anneal time and/or increasing the growth temperature and decreasing the precursor V/III to enhance Ga-adatom diffusion. Cross-sectional TEM studies confirmed that the GaN fins were crystallographically non-polar with respect to the Si(001) substrate surface and were bounded by semi-polar and non-polar facets. The reported Si fabrication and GaN growth process shows promise for the integration of non-polar and semi-polar GaN microstructures on industry standard Si(001) substrates.

AB - A maskless Si trench structure was developed to integrate crystallographically non-polar GaN microstructures with semi-polar facets on Si(001). GaN "fins" were preferentially grown by MOCVD on Si{110} trench sidewalls formed by deep reactive ion etching (DRIE) of Si(001) such that GaN(0001)//Si{110} and GaN(10-10)//Si(001), resulting in a non-polar crystal structure with respect to the Si(001) substrate surface. No masking layer was required to prevent GaN growth on the Si(001) top surface of the trenches, instead, it was found that GaN nucleated preferentially on the Si{110} trench sidewalls. GaN was also observed to nucleate at the top corner of the trenches due to Si etching and exposure of high-index Si facets during the pre-growth H2 anneal. This undesired GaN nucleation was successfully suppressed by reducing the H2 anneal time and/or increasing the growth temperature and decreasing the precursor V/III to enhance Ga-adatom diffusion. Cross-sectional TEM studies confirmed that the GaN fins were crystallographically non-polar with respect to the Si(001) substrate surface and were bounded by semi-polar and non-polar facets. The reported Si fabrication and GaN growth process shows promise for the integration of non-polar and semi-polar GaN microstructures on industry standard Si(001) substrates.

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