Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum-Induced Crystallization

Mel F. Hainey, Zakaria Y. Al Balushi, Ke Wang, Nathan C. Martin, Anushka Bansal, Mikhail Chubarov, Joan M. Redwing

Research output: Contribution to journalLetter

4 Citations (Scopus)

Abstract

Growth of epitaxial III-nitride (AlGaInN) films has long been confined to single crystal substrates which are crystallographically compatible with the hexagonal GaN (0001) surface. However, for lighting, display, and power electronics applications, growth on amorphous substrates such as fused quartz glass or on polycrystalline diamond is desirable. Several approaches to produce c-plane oriented, textured GaN films on glass have been previously demonstrated, but are process-intensive and limited in scalability. In this report, we demonstrate the heteroepitaxial growth of textured GaN films on fused quartz and other substrates using thin silicon film templates fabricated by aluminum-induced crystallization (AIC). The AIC-Si films have a uniform (>95%) Si (111) oriented surface, enabling well-developed GaN-on-Si epitaxial growth processes to be adapted to new substrates. GaN films grown on fused quartz using metalorganic chemical vapor deposition (MOCVD) have uniformly c-axis oriented grains, ≈40–50 μm in size, with random in-plane orientations similar to those of the underlying AIC-Si template layer. Threading dislocation densities of 8.5 ± 1.8 × 109 cm−2 within regions bounded by grain boundaries are comparable to GaN films grown on single crystal Si (111) substrates. Finally, highly oriented GaN growth on AIC-Si is also achieved on both oxidized Si (001) substrates and polycrystalline diamond, demonstrating the general applicability of this approach.

Original languageEnglish (US)
Article number1700392
JournalPhysica Status Solidi - Rapid Research Letters
Volume12
Issue number3
DOIs
StatePublished - Mar 2018

Fingerprint

Crystallization
Aluminum
Epitaxial growth
templates
crystallization
aluminum
Crystals
Substrates
Quartz
crystals
quartz
Diamond
diamonds
Diamonds
Single crystals
glass
single crystals
Glass
silicon films
illuminating

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

@article{e45118f5411240afb10ea3917159c697,
title = "Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum-Induced Crystallization",
abstract = "Growth of epitaxial III-nitride (AlGaInN) films has long been confined to single crystal substrates which are crystallographically compatible with the hexagonal GaN (0001) surface. However, for lighting, display, and power electronics applications, growth on amorphous substrates such as fused quartz glass or on polycrystalline diamond is desirable. Several approaches to produce c-plane oriented, textured GaN films on glass have been previously demonstrated, but are process-intensive and limited in scalability. In this report, we demonstrate the heteroepitaxial growth of textured GaN films on fused quartz and other substrates using thin silicon film templates fabricated by aluminum-induced crystallization (AIC). The AIC-Si films have a uniform (>95{\%}) Si (111) oriented surface, enabling well-developed GaN-on-Si epitaxial growth processes to be adapted to new substrates. GaN films grown on fused quartz using metalorganic chemical vapor deposition (MOCVD) have uniformly c-axis oriented grains, ≈40–50 μm in size, with random in-plane orientations similar to those of the underlying AIC-Si template layer. Threading dislocation densities of 8.5 ± 1.8 × 109 cm−2 within regions bounded by grain boundaries are comparable to GaN films grown on single crystal Si (111) substrates. Finally, highly oriented GaN growth on AIC-Si is also achieved on both oxidized Si (001) substrates and polycrystalline diamond, demonstrating the general applicability of this approach.",
author = "Hainey, {Mel F.} and {Al Balushi}, {Zakaria Y.} and Ke Wang and Martin, {Nathan C.} and Anushka Bansal and Mikhail Chubarov and Redwing, {Joan M.}",
year = "2018",
month = "3",
doi = "10.1002/pssr.201700392",
language = "English (US)",
volume = "12",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "3",

}

Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum-Induced Crystallization. / Hainey, Mel F.; Al Balushi, Zakaria Y.; Wang, Ke; Martin, Nathan C.; Bansal, Anushka; Chubarov, Mikhail; Redwing, Joan M.

In: Physica Status Solidi - Rapid Research Letters, Vol. 12, No. 3, 1700392, 03.2018.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum-Induced Crystallization

AU - Hainey, Mel F.

AU - Al Balushi, Zakaria Y.

AU - Wang, Ke

AU - Martin, Nathan C.

AU - Bansal, Anushka

AU - Chubarov, Mikhail

AU - Redwing, Joan M.

PY - 2018/3

Y1 - 2018/3

N2 - Growth of epitaxial III-nitride (AlGaInN) films has long been confined to single crystal substrates which are crystallographically compatible with the hexagonal GaN (0001) surface. However, for lighting, display, and power electronics applications, growth on amorphous substrates such as fused quartz glass or on polycrystalline diamond is desirable. Several approaches to produce c-plane oriented, textured GaN films on glass have been previously demonstrated, but are process-intensive and limited in scalability. In this report, we demonstrate the heteroepitaxial growth of textured GaN films on fused quartz and other substrates using thin silicon film templates fabricated by aluminum-induced crystallization (AIC). The AIC-Si films have a uniform (>95%) Si (111) oriented surface, enabling well-developed GaN-on-Si epitaxial growth processes to be adapted to new substrates. GaN films grown on fused quartz using metalorganic chemical vapor deposition (MOCVD) have uniformly c-axis oriented grains, ≈40–50 μm in size, with random in-plane orientations similar to those of the underlying AIC-Si template layer. Threading dislocation densities of 8.5 ± 1.8 × 109 cm−2 within regions bounded by grain boundaries are comparable to GaN films grown on single crystal Si (111) substrates. Finally, highly oriented GaN growth on AIC-Si is also achieved on both oxidized Si (001) substrates and polycrystalline diamond, demonstrating the general applicability of this approach.

AB - Growth of epitaxial III-nitride (AlGaInN) films has long been confined to single crystal substrates which are crystallographically compatible with the hexagonal GaN (0001) surface. However, for lighting, display, and power electronics applications, growth on amorphous substrates such as fused quartz glass or on polycrystalline diamond is desirable. Several approaches to produce c-plane oriented, textured GaN films on glass have been previously demonstrated, but are process-intensive and limited in scalability. In this report, we demonstrate the heteroepitaxial growth of textured GaN films on fused quartz and other substrates using thin silicon film templates fabricated by aluminum-induced crystallization (AIC). The AIC-Si films have a uniform (>95%) Si (111) oriented surface, enabling well-developed GaN-on-Si epitaxial growth processes to be adapted to new substrates. GaN films grown on fused quartz using metalorganic chemical vapor deposition (MOCVD) have uniformly c-axis oriented grains, ≈40–50 μm in size, with random in-plane orientations similar to those of the underlying AIC-Si template layer. Threading dislocation densities of 8.5 ± 1.8 × 109 cm−2 within regions bounded by grain boundaries are comparable to GaN films grown on single crystal Si (111) substrates. Finally, highly oriented GaN growth on AIC-Si is also achieved on both oxidized Si (001) substrates and polycrystalline diamond, demonstrating the general applicability of this approach.

UR - http://www.scopus.com/inward/record.url?scp=85042925779&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042925779&partnerID=8YFLogxK

U2 - 10.1002/pssr.201700392

DO - 10.1002/pssr.201700392

M3 - Letter

AN - SCOPUS:85042925779

VL - 12

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 3

M1 - 1700392

ER -