Heterojunction resonant tunneling diode at the atomic limit

Ram Krishna Ghosh, Yu Chuan Lin, Joshua A. Robinson, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS2-WSe2-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe2-Gr) does not show any NDR in its I-V characteristics.

Original languageEnglish (US)
Title of host publication2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages266-269
Number of pages4
ISBN (Electronic)9781467378581
DOIs
StatePublished - Oct 5 2015
Event20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 - Washington, United States
Duration: Sep 9 2015Sep 11 2015

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2015-October

Other

Other20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
CountryUnited States
CityWashington
Period9/9/159/11/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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