Heterojunction resonant tunneling diode at the atomic limit

Ram Krishna Ghosh; Yu Chuan Lin; Joshua A. Robinson; Suman Datta

doi:10.1109/SISPAD.2015.7292310

Heterojunction resonant tunneling diode at the atomic limit

Ram Krishna Ghosh, Yu Chuan Lin, Joshua A. Robinson, Suman Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS₂), and tungsten diselenide (WSe₂). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS₂-WSe₂-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe₂-Gr) does not show any NDR in its I-V characteristics.

Original language	English (US)
Title of host publication	2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	266-269
Number of pages	4
ISBN (Electronic)	9781467378581
DOIs	https://doi.org/10.1109/SISPAD.2015.7292310
State	Published - Oct 5 2015
Event	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 - Washington, United States Duration: Sep 9 2015 → Sep 11 2015

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2015-October

Other

Other	20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Country	United States
City	Washington
Period	9/9/15 → 9/11/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Access to Document

10.1109/SISPAD.2015.7292310

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Ghosh, R. K., Lin, Y. C., Robinson, J. A., & Datta, S. (2015). Heterojunction resonant tunneling diode at the atomic limit. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 (pp. 266-269). [7292310] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2015-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2015.7292310

Ghosh, Ram Krishna ; Lin, Yu Chuan ; Robinson, Joshua A. ; Datta, Suman. / Heterojunction resonant tunneling diode at the atomic limit. 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 266-269 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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abstract = "In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS2-WSe2-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe2-Gr) does not show any NDR in its I-V characteristics.",

author = "Ghosh, {Ram Krishna} and Lin, {Yu Chuan} and Robinson, {Joshua A.} and Suman Datta",

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Ghosh, RK, Lin, YC, Robinson, JA & Datta, S 2015, Heterojunction resonant tunneling diode at the atomic limit. in 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015., 7292310, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2015-October, Institute of Electrical and Electronics Engineers Inc., pp. 266-269, 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015, Washington, United States, 9/9/15. https://doi.org/10.1109/SISPAD.2015.7292310

Heterojunction resonant tunneling diode at the atomic limit. / Ghosh, Ram Krishna; Lin, Yu Chuan; Robinson, Joshua A.; Datta, Suman.

2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 266-269 7292310 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Heterojunction resonant tunneling diode at the atomic limit

AU - Ghosh, Ram Krishna

AU - Lin, Yu Chuan

AU - Robinson, Joshua A.

AU - Datta, Suman

PY - 2015/10/5

Y1 - 2015/10/5

N2 - In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS2-WSe2-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe2-Gr) does not show any NDR in its I-V characteristics.

AB - In this work, we present atomically thin resonant tunnel diode, based on vertically stacked heterostructures by combining graphene with layered transition-metal dichalocogenides (TMDs) such as molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). Density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) transport calculation shows resonant tunnelling in heterolayer TMD and graphene (i.e. MoS2-WSe2-Gr) system with a prominent negative differential resistance (NDR) characteristic. However, homolayer TMD-graphene stack (i.e. bilayer WSe2-Gr) does not show any NDR in its I-V characteristics.

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T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

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BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015

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Ghosh RK, Lin YC, Robinson JA, Datta S. Heterojunction resonant tunneling diode at the atomic limit. In 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 266-269. 7292310. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2015.7292310