High-aspect ratio patterning of MnAs films

W. Seidel, K. H. Ploog, Roman Engel-Herbert, T. Hesjedal

Research output: Contribution to journalArticle

Abstract

We report the high-aspect ratio patterning of epitaxial MnAs-on-GaAs(0 0 1) films. The control of strain is key since MnAs-on-GaAs(0 0 1) exhibits a strain-stabilized coexistence of two chemically, elastically and magnetically distinct phases forming a self-organized stripe structure over a temperature range of 10-40 °C. Anisotropic plasma etching allows for high-aspect ratios and good reproducibility. Using Ti films as an etch mask, arbitrarily oriented structures can be transferred into films of up to 300 nm thickness. The removal of the masking material is challenging as MnAs reacts with all common acids, alkalis and even water. Optimum results are obtained by etching the Ti mask in hydrofluoric acid at elevated temperatures (>50 °C), where MnAs is entirely in its β-phase.

Original languageEnglish (US)
Article number025
Pages (from-to)1502-1506
Number of pages5
JournalSemiconductor Science and Technology
Volume21
Issue number10
DOIs
StatePublished - Oct 10 2006

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high aspect ratio
Aspect ratio
Masks
masks
Hydrofluoric Acid
Anisotropic etching
Hydrofluoric acid
Plasma etching
hydrofluoric acid
Alkalies
plasma etching
masking
Etching
alkalies
etching
Temperature
acids
Acids
temperature
Water

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Seidel, W. ; Ploog, K. H. ; Engel-Herbert, Roman ; Hesjedal, T. / High-aspect ratio patterning of MnAs films. In: Semiconductor Science and Technology. 2006 ; Vol. 21, No. 10. pp. 1502-1506.
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High-aspect ratio patterning of MnAs films. / Seidel, W.; Ploog, K. H.; Engel-Herbert, Roman; Hesjedal, T.

In: Semiconductor Science and Technology, Vol. 21, No. 10, 025, 10.10.2006, p. 1502-1506.

Research output: Contribution to journalArticle

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AU - Engel-Herbert, Roman

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