High aspect ratio submicron microstructures in LiNbO3: fabrication and potential applications to photonic devices

    Research output: Contribution to journalConference article

    Abstract

    Fabrication of high aspect ratio submicron to nanometer range micro structures in LiNbO3 using a state of the art Schlumberger AMS 3000 focused ion beam (FIB) system is presented. The submicron structures with about 350 nm width and 1600 nm depth are fabricated by employing XeF2 gas assisted Gallium ion beam etching with 50 pA of ion beam current. A variety of opto-electronic devices such as micro sensors, directional couplers, extremely compact electro-optic modulators and wavelength filters could be built based on this type of high aspect ratio submicron structures in LiNbO3, which may lead to the next generation of integrated opto-electronic devices that have higher levels of device integration and enhanced functionality.

    Original languageEnglish (US)
    Pages (from-to)40-43
    Number of pages4
    JournalProceedings of SPIE - The International Society for Optical Engineering
    Volume3805
    StatePublished - Dec 1 1999
    EventProceedings of the 1999 Photonic Devices and Algorithms for Computing - Denver, CO, USA
    Duration: Jul 22 1999Jul 23 1999

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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