High-Barrier Al/p-Si Schottky Diodes

S. Ashok, K. Giewont

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Sequential implantation of argon ions and low-energy hydrogen ions has been found to yield Schottky barriers of exceptionally high values on p-type silicon. The interaction of these ions in Si is quite complex, involving donor defect generation, defect passivation, and acceptor dopant neutralization. The apparent synergism of these specific implants has resulted in Al/p-Si Schottky diodes with an effective barrier height as high as 0.83 eV, among the highest value reported for any metal/p-Si contact.

Original languageEnglish (US)
Pages (from-to)462-464
Number of pages3
JournalIEEE Electron Device Letters
Volume6
Issue number9
DOIs
StatePublished - 1985

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

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