High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

Jia Mian Hu, Zheng Li, Long Qing Chen, Ce Wen Nan

Research output: Contribution to journalArticlepeer-review

308 Scopus citations

Abstract

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gbg inch -2, ultralow power dissipation as low as 0.16fJ per bit and room temperature high-speed operation below 10ns.

Original languageEnglish (US)
Article number553
JournalNature communications
Volume2
Issue number1
DOIs
StatePublished - 2011

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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