High dielectric tunability in lead niobate pyrochlore films

M. Mirsaneh, B. E. Hayden, E. Furman, S. Perini, M. T. Lanagan, I. M. Reaney

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11 Scopus citations


High throughput physical vapor deposition has been used to grow crystalline Pb nNb 2O 5n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (ε r) and dielectric loss (tan ) were frequency independent between 100 Hz and 1 MHz and -60 °C-100° C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb 1.2Nb 2O 6.2, PN, Pb ≈ 38) of ∼26 (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan δ ∼ 0.0009 (0.013-0.005 in BST and 0.008-0.0005 in BZN), comparable or superior r of 419 (450 in BST and 160-220 in BZN) and 26 tunability (∼50 in BST and 3.5 in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.

Original languageEnglish (US)
Article number082901
JournalApplied Physics Letters
Issue number8
StatePublished - Feb 20 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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