High dielectric tunability in lead niobate pyrochlore films

M. Mirsaneh, B. E. Hayden, E. Furman, Steven Edward Perini, Michael T. Lanagan, I. M. Reaney

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Abstract

High throughput physical vapor deposition has been used to grow crystalline Pb nNb 2O 5n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (ε r) and dielectric loss (tan ) were frequency independent between 100 Hz and 1 MHz and -60 °C-100° C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb 1.2Nb 2O 6.2, PN, Pb ≈ 38) of ∼26 (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan δ ∼ 0.0009 (0.013-0.005 in BST and 0.008-0.0005 in BZN), comparable or superior r of 419 (450 in BST and 160-220 in BZN) and 26 tunability (∼50 in BST and 3.5 in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.

Original languageEnglish (US)
Article number082901
JournalApplied Physics Letters
Volume100
Issue number8
DOIs
StatePublished - Feb 20 2012

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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