High throughput physical vapor deposition has been used to grow crystalline Pb nNb 2O 5n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (ε r) and dielectric loss (tan ) were frequency independent between 100 Hz and 1 MHz and -60 °C-100° C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb 1.2Nb 2O 6.2, PN, Pb ≈ 38) of ∼26 (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan δ ∼ 0.0009 (0.013-0.005 in BST and 0.008-0.0005 in BZN), comparable or superior r of 419 (450 in BST and 160-220 in BZN) and 26 tunability (∼50 in BST and 3.5 in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)