High-dose carbon ion implantation studies in silicon

K. Srikanth, M. Chu, S. Ashok, N. Nguyen, K. Vedam

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14 Scopus citations

Abstract

The electrical properties of crystalline silicon (c-Si) subjected to high-dose (1017 cm-2) implantation of carbon with varying post-anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-silicon structures. In the as-implanted samples, a Schottky diode-like behavior is seen but with a very high diode ideality factor. The well-known influence of ion damage on the silicon surface barrier is clearly evident, but in addition we see the domination of transport by an Si-C buried layer formed after annealing. Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.

Original languageEnglish (US)
Pages (from-to)323-329
Number of pages7
JournalThin Solid Films
Volume163
Issue numberC
DOIs
StatePublished - Sep 1988

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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