The electrical properties of crystalline silicon (c-Si) subjected to high-dose (1017 cm-2) implantation of carbon with varying post-anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-silicon structures. In the as-implanted samples, a Schottky diode-like behavior is seen but with a very high diode ideality factor. The well-known influence of ion damage on the silicon surface barrier is clearly evident, but in addition we see the domination of transport by an Si-C buried layer formed after annealing. Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry