High-dose carbon ion implantation studies in silicon

K. Srikanth, M. Chu, S Ashok, N. Nguyen, K. Vedam

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The electrical properties of crystalline silicon (c-Si) subjected to high-dose (10 17 cm -2 ) implantation of carbon with varying post-anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-silicon structures. In the as-implanted samples, a Schottky diode-like behavior is seen but with a very high diode ideality factor. The well-known influence of ion damage on the silicon surface barrier is clearly evident, but in addition we see the domination of transport by an Si-C buried layer formed after annealing. Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.

Original languageEnglish (US)
Pages (from-to)323-329
Number of pages7
JournalThin Solid Films
Volume163
Issue numberC
DOIs
StatePublished - Jan 1 1988

Fingerprint

Silicon
Ion implantation
ion implantation
Carbon
dosage
carbon
Diodes
silicon
Carrier transport
Spectroscopic ellipsometry
Schottky diodes
ellipsometry
implantation
Electric properties
Metals
diodes
electrical properties
Spectroscopy
Annealing
Ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Srikanth, K., Chu, M., Ashok, S., Nguyen, N., & Vedam, K. (1988). High-dose carbon ion implantation studies in silicon. Thin Solid Films, 163(C), 323-329. https://doi.org/10.1016/0040-6090(88)90443-9
Srikanth, K. ; Chu, M. ; Ashok, S ; Nguyen, N. ; Vedam, K. / High-dose carbon ion implantation studies in silicon. In: Thin Solid Films. 1988 ; Vol. 163, No. C. pp. 323-329.
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Srikanth, K, Chu, M, Ashok, S, Nguyen, N & Vedam, K 1988, 'High-dose carbon ion implantation studies in silicon', Thin Solid Films, vol. 163, no. C, pp. 323-329. https://doi.org/10.1016/0040-6090(88)90443-9

High-dose carbon ion implantation studies in silicon. / Srikanth, K.; Chu, M.; Ashok, S; Nguyen, N.; Vedam, K.

In: Thin Solid Films, Vol. 163, No. C, 01.01.1988, p. 323-329.

Research output: Contribution to journalArticle

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AU - Srikanth, K.

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Srikanth K, Chu M, Ashok S, Nguyen N, Vedam K. High-dose carbon ion implantation studies in silicon. Thin Solid Films. 1988 Jan 1;163(C):323-329. https://doi.org/10.1016/0040-6090(88)90443-9