High-dose oxygen ion implanted heterointerfaces in silicon

S. Ashok, Srikanth Krishnan

Research output: Contribution to journalArticle

Abstract

Emitter-base band gap differentials realized with alloys such as SixGe1-x, SiCx and μc-Si:H have been widely investigated for stretching the performance of Si bipolar transistors. We report on the properties of wide-gap surface regions generated in crystalline Si (c-Si) by high-dose oxygen ion implantation. The electrical and physical property changes of crystalline Si after substoichiometric O ion implantation have been investigated using current-voltage, capacitance-voltage, spreading resistance, secondary ion mass spectroscopy, spectroscopic ellipsometry and Fourier transform infrared spectroscopy. A key finding is the presence of donors in the vicinity of the implanted region, resulting in extensive counterdoping of p-type c-Si. Redistribution of the oxygen atoms during the high-temperature (1200°C) anneal results in sharp interfaces aiding the formation of the heterojunction. Mesa-type diodes on the implanted sample exhibit excellent rectification with diode ideality factor of 1.2, and a room temperature reverse saturation current density of 1 × 10-8 A/cm2 with a thermal activation energy of 0.92 eV.

Original languageEnglish (US)
Pages (from-to)372-378
Number of pages7
JournalNuclear Inst. and Methods in Physics Research, B
Volume106
Issue number1-4
DOIs
StatePublished - Dec 2 1995

Fingerprint

oxygen ions
ion implantation
diodes
Crystalline materials
Ion implantation
Silicon
dosage
Oxygen
Ions
Diodes
mesas
electric potential
silicon
rectification
bipolar transistors
ellipsometry
heterojunctions
oxygen atoms
emitters
mass spectroscopy

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Ashok, S. ; Krishnan, Srikanth. / High-dose oxygen ion implanted heterointerfaces in silicon. In: Nuclear Inst. and Methods in Physics Research, B. 1995 ; Vol. 106, No. 1-4. pp. 372-378.
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High-dose oxygen ion implanted heterointerfaces in silicon. / Ashok, S.; Krishnan, Srikanth.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 106, No. 1-4, 02.12.1995, p. 372-378.

Research output: Contribution to journalArticle

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AU - Ashok, S.

AU - Krishnan, Srikanth

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