High-dose oxygen ion implanted heterointerfaces in silicon

Physics & Astronomy

• oxygen ions 100%
• ion implantation 83%
• diodes 68%
• dosage 60%
• mesas 52%
• rectification 49%
• bipolar transistors 49%
• electric potential 49%
• silicon 48%
• oxygen atoms 47%
• ellipsometry 44%
• mass spectroscopy 44%
• infrared spectroscopy 40%
• heterojunctions 40%
• emitters 37%
• capacitance 36%
• physical properties 35%
• activation energy 33%
• electrical properties 33%
• current density 32%
• saturation 31%
• room temperature 25%
• ions 21%
• performance 20%

Engineering & Materials Science

• Crystalline materials 95%
• Ions 83%
• Ion implantation 82%
• Oxygen 73%
• Silicon 71%
• Diodes 55%
• Spectroscopic ellipsometry 55%
• Heterojunctions 39%
• Fourier transform infrared spectroscopy 37%
• Bipolar transistors 37%
• Energy gap 34%
• Spectroscopy 33%
• Electric properties 32%
• Stretching 32%
• Activation energy 31%
• Atoms 31%
• Current density 29%
• Physical properties 27%
• Capacitance 26%
• Temperature 24%
• Hot Temperature 14%