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High-dose oxygen ion implanted heterointerfaces in silicon
S. Ashok, Srikanth Krishnan
Engineering Science and Mechanics
Materials Research Institute (MRI)
Research output
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peer-review
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Physics & Astronomy
oxygen ions
100%
ion implantation
83%
diodes
68%
dosage
60%
mesas
52%
rectification
49%
bipolar transistors
49%
electric potential
49%
silicon
48%
oxygen atoms
47%
ellipsometry
44%
mass spectroscopy
44%
infrared spectroscopy
40%
heterojunctions
40%
emitters
37%
capacitance
36%
physical properties
35%
activation energy
33%
electrical properties
33%
current density
32%
saturation
31%
room temperature
25%
ions
21%
performance
20%
Engineering & Materials Science
Crystalline materials
95%
Ions
83%
Ion implantation
82%
Oxygen
73%
Silicon
71%
Diodes
55%
Spectroscopic ellipsometry
55%
Heterojunctions
39%
Fourier transform infrared spectroscopy
37%
Bipolar transistors
37%
Energy gap
34%
Spectroscopy
33%
Electric properties
32%
Stretching
32%
Activation energy
31%
Atoms
31%
Current density
29%
Physical properties
27%
Capacitance
26%
Temperature
24%
Hot Temperature
14%