High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources

Wenqing Dai, V. Ferrando, A. V. Pogrebnyakov, R. H.T. Wilke, Ke Chen, Xiaojun Weng, Joan Redwing, Chung Wung Bark, Chang Beom Eom, Y. Zhu, P. M. Voyles, Dwight Rickel, J. B. Betts, C. H. Mielke, A. Gurevich, D. C. Larbalestier, Qi Li, X. X. Xi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have studied the high-field properties of carbon-doped MgB2 thin films prepared by hybrid physical-chemical vapor deposition (HPCVD). Carbon doping was accomplished by adding carbon-containing gas, such as bis(methylcyclopentadienyl)magnesium and trimethylboron, into the hydrogen carrier gas during the deposition. In both cases, Tc drops slowly and residual resistivity increases considerably with carbon doping. Both the a and c lattice constants increase with carbon content in the films, a behavior different from that of bulk carbon-doped MgB2 samples. The films heavily doped with trimethylboron show very high parallel Hc2 over 70T at low temperatures and a large temperature derivative near Tc. These behaviors are found to depend on the unique microstructure of the films, which consists of MgB2 layers a few-nanometers thick separated by non-superconducting MgB2C2 layers. This leads to an increase in the parallel Hc2 by the geometrical effect, which is in addition to the significant enhancement of Hc2 due to changes in the scattering rates within and between the two bands present in films doped using both carbon sources. The high Hc2 and high-field Jc(H) values observed in this work are very promising for the application of MgB 2 in high magnetic fields.

Original languageEnglish (US)
Article number125014
JournalSuperconductor Science and Technology
Volume24
Issue number12
DOIs
StatePublished - Dec 1 2011

Fingerprint

Physical vapor deposition
Chemical vapor deposition
Carbon
vapor deposition
Thin films
carbon
thin films
Gases
Doping (additives)
gases
Magnesium
Lattice constants
magnesium
Hydrogen
Scattering
Magnetic fields
Derivatives
Temperature
microstructure
Microstructure

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Dai, Wenqing ; Ferrando, V. ; Pogrebnyakov, A. V. ; Wilke, R. H.T. ; Chen, Ke ; Weng, Xiaojun ; Redwing, Joan ; Bark, Chung Wung ; Eom, Chang Beom ; Zhu, Y. ; Voyles, P. M. ; Rickel, Dwight ; Betts, J. B. ; Mielke, C. H. ; Gurevich, A. ; Larbalestier, D. C. ; Li, Qi ; Xi, X. X. / High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources. In: Superconductor Science and Technology. 2011 ; Vol. 24, No. 12.
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abstract = "We have studied the high-field properties of carbon-doped MgB2 thin films prepared by hybrid physical-chemical vapor deposition (HPCVD). Carbon doping was accomplished by adding carbon-containing gas, such as bis(methylcyclopentadienyl)magnesium and trimethylboron, into the hydrogen carrier gas during the deposition. In both cases, Tc drops slowly and residual resistivity increases considerably with carbon doping. Both the a and c lattice constants increase with carbon content in the films, a behavior different from that of bulk carbon-doped MgB2 samples. The films heavily doped with trimethylboron show very high parallel Hc2 over 70T at low temperatures and a large temperature derivative near Tc. These behaviors are found to depend on the unique microstructure of the films, which consists of MgB2 layers a few-nanometers thick separated by non-superconducting MgB2C2 layers. This leads to an increase in the parallel Hc2 by the geometrical effect, which is in addition to the significant enhancement of Hc2 due to changes in the scattering rates within and between the two bands present in films doped using both carbon sources. The high Hc2 and high-field Jc(H) values observed in this work are very promising for the application of MgB 2 in high magnetic fields.",
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Dai, W, Ferrando, V, Pogrebnyakov, AV, Wilke, RHT, Chen, K, Weng, X, Redwing, J, Bark, CW, Eom, CB, Zhu, Y, Voyles, PM, Rickel, D, Betts, JB, Mielke, CH, Gurevich, A, Larbalestier, DC, Li, Q & Xi, XX 2011, 'High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources', Superconductor Science and Technology, vol. 24, no. 12, 125014. https://doi.org/10.1088/0953-2048/24/12/125014

High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources. / Dai, Wenqing; Ferrando, V.; Pogrebnyakov, A. V.; Wilke, R. H.T.; Chen, Ke; Weng, Xiaojun; Redwing, Joan; Bark, Chung Wung; Eom, Chang Beom; Zhu, Y.; Voyles, P. M.; Rickel, Dwight; Betts, J. B.; Mielke, C. H.; Gurevich, A.; Larbalestier, D. C.; Li, Qi; Xi, X. X.

In: Superconductor Science and Technology, Vol. 24, No. 12, 125014, 01.12.2011.

Research output: Contribution to journalArticle

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T1 - High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources

AU - Dai, Wenqing

AU - Ferrando, V.

AU - Pogrebnyakov, A. V.

AU - Wilke, R. H.T.

AU - Chen, Ke

AU - Weng, Xiaojun

AU - Redwing, Joan

AU - Bark, Chung Wung

AU - Eom, Chang Beom

AU - Zhu, Y.

AU - Voyles, P. M.

AU - Rickel, Dwight

AU - Betts, J. B.

AU - Mielke, C. H.

AU - Gurevich, A.

AU - Larbalestier, D. C.

AU - Li, Qi

AU - Xi, X. X.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We have studied the high-field properties of carbon-doped MgB2 thin films prepared by hybrid physical-chemical vapor deposition (HPCVD). Carbon doping was accomplished by adding carbon-containing gas, such as bis(methylcyclopentadienyl)magnesium and trimethylboron, into the hydrogen carrier gas during the deposition. In both cases, Tc drops slowly and residual resistivity increases considerably with carbon doping. Both the a and c lattice constants increase with carbon content in the films, a behavior different from that of bulk carbon-doped MgB2 samples. The films heavily doped with trimethylboron show very high parallel Hc2 over 70T at low temperatures and a large temperature derivative near Tc. These behaviors are found to depend on the unique microstructure of the films, which consists of MgB2 layers a few-nanometers thick separated by non-superconducting MgB2C2 layers. This leads to an increase in the parallel Hc2 by the geometrical effect, which is in addition to the significant enhancement of Hc2 due to changes in the scattering rates within and between the two bands present in films doped using both carbon sources. The high Hc2 and high-field Jc(H) values observed in this work are very promising for the application of MgB 2 in high magnetic fields.

AB - We have studied the high-field properties of carbon-doped MgB2 thin films prepared by hybrid physical-chemical vapor deposition (HPCVD). Carbon doping was accomplished by adding carbon-containing gas, such as bis(methylcyclopentadienyl)magnesium and trimethylboron, into the hydrogen carrier gas during the deposition. In both cases, Tc drops slowly and residual resistivity increases considerably with carbon doping. Both the a and c lattice constants increase with carbon content in the films, a behavior different from that of bulk carbon-doped MgB2 samples. The films heavily doped with trimethylboron show very high parallel Hc2 over 70T at low temperatures and a large temperature derivative near Tc. These behaviors are found to depend on the unique microstructure of the films, which consists of MgB2 layers a few-nanometers thick separated by non-superconducting MgB2C2 layers. This leads to an increase in the parallel Hc2 by the geometrical effect, which is in addition to the significant enhancement of Hc2 due to changes in the scattering rates within and between the two bands present in films doped using both carbon sources. The high Hc2 and high-field Jc(H) values observed in this work are very promising for the application of MgB 2 in high magnetic fields.

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