Two-dimensional transition metal dichalcogenides are potential candidates for high-performance flexible electronics. In this paper, we report thin film transistors (TFTs) fabricated on ∼5 μm thick solution-cast polyimide substrates using chemical vapor deposition (CVD) synthesized single layer WS2as the active layer. The linear region field effect mobility ranges from2to10 cm2V-1s-1, with current on-off ratio exceeding 106. By using a thin polyimide substrate, the bending induced tensile stress on our TFTs is relatively small when compared to devices fabricated on thicker flexible substrates. Static bending and upto 50 000 bending/flattening cycles were employedto investigate the reliability of these TFTs for potential flexible electronic applications. Our results demonstrate that CVD grown WS2TFTs fabricatedon thin polyimide have good performance stability for upto 2 mm radius bending and 50 000 bending cycles. It is therefore clear that thin polymeric substrates provide a simple approach for reliable, scalable, and high-performance 2D-TMD-basedflexible electronics.
|Original language||English (US)|
|State||Published - May 9 2016|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering