High flex cycle testing of CVD monolayer WS2 TFTs on thin flexible polyimide

Yiyang Gong, Victor Carozo, Haoyu Li, Mauricio Terrones Maldonado, Thomas Nelson Jackson

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Two-dimensional transition metal dichalcogenides are potential candidates for high-performance flexible electronics. In this paper, we report thin film transistors (TFTs) fabricated on ∼5 μm thick solution-cast polyimide substrates using chemical vapor deposition (CVD) synthesized single layer WS2as the active layer. The linear region field effect mobility ranges from2to10 cm2V-1s-1, with current on-off ratio exceeding 106. By using a thin polyimide substrate, the bending induced tensile stress on our TFTs is relatively small when compared to devices fabricated on thicker flexible substrates. Static bending and upto 50 000 bending/flattening cycles were employedto investigate the reliability of these TFTs for potential flexible electronic applications. Our results demonstrate that CVD grown WS2TFTs fabricatedon thin polyimide have good performance stability for upto 2 mm radius bending and 50 000 bending cycles. It is therefore clear that thin polymeric substrates provide a simple approach for reliable, scalable, and high-performance 2D-TMD-basedflexible electronics.

Original languageEnglish (US)
Article number021008
Journal2D Materials
Volume3
Issue number2
DOIs
StatePublished - May 9 2016

Fingerprint

Thin film transistors
polyimides
Polyimides
Chemical vapor deposition
Monolayers
transistors
vapor deposition
Flexible electronics
cycles
Testing
Substrates
thin films
electronics
Tensile stress
Transition metals
flattening
tensile stress
Electronic equipment
casts
transition metals

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{27028187a0724d28bb12dc0c6ef4ae2e,
title = "High flex cycle testing of CVD monolayer WS2 TFTs on thin flexible polyimide",
abstract = "Two-dimensional transition metal dichalcogenides are potential candidates for high-performance flexible electronics. In this paper, we report thin film transistors (TFTs) fabricated on ∼5 μm thick solution-cast polyimide substrates using chemical vapor deposition (CVD) synthesized single layer WS2as the active layer. The linear region field effect mobility ranges from2to10 cm2V-1s-1, with current on-off ratio exceeding 106. By using a thin polyimide substrate, the bending induced tensile stress on our TFTs is relatively small when compared to devices fabricated on thicker flexible substrates. Static bending and upto 50 000 bending/flattening cycles were employedto investigate the reliability of these TFTs for potential flexible electronic applications. Our results demonstrate that CVD grown WS2TFTs fabricatedon thin polyimide have good performance stability for upto 2 mm radius bending and 50 000 bending cycles. It is therefore clear that thin polymeric substrates provide a simple approach for reliable, scalable, and high-performance 2D-TMD-basedflexible electronics.",
author = "Yiyang Gong and Victor Carozo and Haoyu Li and {Terrones Maldonado}, Mauricio and Jackson, {Thomas Nelson}",
year = "2016",
month = "5",
day = "9",
doi = "10.1088/2053-1583/3/2/021008",
language = "English (US)",
volume = "3",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "2",

}

High flex cycle testing of CVD monolayer WS2 TFTs on thin flexible polyimide. / Gong, Yiyang; Carozo, Victor; Li, Haoyu; Terrones Maldonado, Mauricio; Jackson, Thomas Nelson.

In: 2D Materials, Vol. 3, No. 2, 021008, 09.05.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High flex cycle testing of CVD monolayer WS2 TFTs on thin flexible polyimide

AU - Gong, Yiyang

AU - Carozo, Victor

AU - Li, Haoyu

AU - Terrones Maldonado, Mauricio

AU - Jackson, Thomas Nelson

PY - 2016/5/9

Y1 - 2016/5/9

N2 - Two-dimensional transition metal dichalcogenides are potential candidates for high-performance flexible electronics. In this paper, we report thin film transistors (TFTs) fabricated on ∼5 μm thick solution-cast polyimide substrates using chemical vapor deposition (CVD) synthesized single layer WS2as the active layer. The linear region field effect mobility ranges from2to10 cm2V-1s-1, with current on-off ratio exceeding 106. By using a thin polyimide substrate, the bending induced tensile stress on our TFTs is relatively small when compared to devices fabricated on thicker flexible substrates. Static bending and upto 50 000 bending/flattening cycles were employedto investigate the reliability of these TFTs for potential flexible electronic applications. Our results demonstrate that CVD grown WS2TFTs fabricatedon thin polyimide have good performance stability for upto 2 mm radius bending and 50 000 bending cycles. It is therefore clear that thin polymeric substrates provide a simple approach for reliable, scalable, and high-performance 2D-TMD-basedflexible electronics.

AB - Two-dimensional transition metal dichalcogenides are potential candidates for high-performance flexible electronics. In this paper, we report thin film transistors (TFTs) fabricated on ∼5 μm thick solution-cast polyimide substrates using chemical vapor deposition (CVD) synthesized single layer WS2as the active layer. The linear region field effect mobility ranges from2to10 cm2V-1s-1, with current on-off ratio exceeding 106. By using a thin polyimide substrate, the bending induced tensile stress on our TFTs is relatively small when compared to devices fabricated on thicker flexible substrates. Static bending and upto 50 000 bending/flattening cycles were employedto investigate the reliability of these TFTs for potential flexible electronic applications. Our results demonstrate that CVD grown WS2TFTs fabricatedon thin polyimide have good performance stability for upto 2 mm radius bending and 50 000 bending cycles. It is therefore clear that thin polymeric substrates provide a simple approach for reliable, scalable, and high-performance 2D-TMD-basedflexible electronics.

UR - http://www.scopus.com/inward/record.url?scp=84977523809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84977523809&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/3/2/021008

DO - 10.1088/2053-1583/3/2/021008

M3 - Article

AN - SCOPUS:84977523809

VL - 3

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 2

M1 - 021008

ER -