High frequency MoS2 nanomechanical resonators

Jaesung Lee, Zenghui Wang, Keliang He, Jie Shan, Philip X.L. Feng

Research output: Contribution to journalArticle

161 Citations (Scopus)

Abstract

Molybdenum disulfide (MoS2), a layered semiconducting material in transition metal dichalcogenides (TMDCs), as thin as a monolayer (consisting of a hexagonal plane of Mo atoms covalently bonded and sandwiched between two planes of S atoms, in a trigonal prismatic structure), has demonstrated unique properties and strong promises for emerging two-dimensional (2D) nanodevices. Here we report on the demonstration of movable and vibrating MoS2 nanodevices, where MoS2 diaphragms as thin as 6 nm (a stack of 9 monolayers) exhibit fundamental-mode nanomechanical resonances up to f 0 ∼ 60 MHz in the very high frequency (VHF) band, and frequency-quality (Q) factor products up to f0 × Q ∼ 2 × 1010Hz, all at room temperature. The experimental results from many devices with a wide range of thicknesses and lateral sizes, in combination with theoretical analysis, quantitatively elucidate the elastic transition regimes in these ultrathin MoS2 nanomechanical resonators. We further delineate a roadmap for scaling MoS2 2D resonators and transducers toward microwave frequencies. This study also opens up possibilities for new classes of vibratory devices to exploit strain- and dynamics-engineered ultrathin semiconducting 2D crystals.

Original languageEnglish (US)
Pages (from-to)6086-6091
Number of pages6
JournalACS nano
Volume7
Issue number7
DOIs
StatePublished - Jul 23 2013

Fingerprint

Resonators
Monolayers
resonators
molybdenum disulfides
Atoms
very high frequencies
Microwave frequencies
diaphragms
Diaphragms
microwave frequencies
Molybdenum
Frequency bands
Transition metals
atoms
Q factors
Transducers
emerging
transducers
Demonstrations
transition metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lee, J., Wang, Z., He, K., Shan, J., & Feng, P. X. L. (2013). High frequency MoS2 nanomechanical resonators. ACS nano, 7(7), 6086-6091. https://doi.org/10.1021/nn4018872
Lee, Jaesung ; Wang, Zenghui ; He, Keliang ; Shan, Jie ; Feng, Philip X.L. / High frequency MoS2 nanomechanical resonators. In: ACS nano. 2013 ; Vol. 7, No. 7. pp. 6086-6091.
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Lee, J, Wang, Z, He, K, Shan, J & Feng, PXL 2013, 'High frequency MoS2 nanomechanical resonators', ACS nano, vol. 7, no. 7, pp. 6086-6091. https://doi.org/10.1021/nn4018872

High frequency MoS2 nanomechanical resonators. / Lee, Jaesung; Wang, Zenghui; He, Keliang; Shan, Jie; Feng, Philip X.L.

In: ACS nano, Vol. 7, No. 7, 23.07.2013, p. 6086-6091.

Research output: Contribution to journalArticle

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Lee J, Wang Z, He K, Shan J, Feng PXL. High frequency MoS2 nanomechanical resonators. ACS nano. 2013 Jul 23;7(7):6086-6091. https://doi.org/10.1021/nn4018872