High ion content siloxane phosphonium ionomers with very low T g

Siwei Liang, Michael V. Oreilly, U. Hyeok Choi, Huai Suen Shiau, Joshua Bartels, Quan Chen, James Runt, Karen I. Winey, Ralph H. Colby

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Polysiloxane phosphonium single-ion conductors grafted with oligomeric PEO and with ion contents ranging from 5 to 22 mol % were synthesized via hydrosilylation reaction. The parent Br- anion was exchanged to F- or bis(trifluoromethanesulfonyl)imide (TFSI-). X-ray scattering data suggest ion aggregation is absent in these phosphonium ionomers, which contributes to low glass transition temperatures (below -70 °C) with only a weak dependence on both ion content and counteranion type. Conductivities weakly increase with ion content but exhibit a strong dependence on anion type. The highest conductivity at 30 °C is 20 μS/cm for dry neat ionomer, with the TFSI- anion, consistent with its relatively delocalized negative charge and large size that weaken interactions between TFSI- and the phosphonium cation.

Original languageEnglish (US)
Pages (from-to)4428-4437
Number of pages10
JournalMacromolecules
Volume47
Issue number13
DOIs
StatePublished - Jul 8 2014

All Science Journal Classification (ASJC) codes

  • Organic Chemistry
  • Polymers and Plastics
  • Inorganic Chemistry
  • Materials Chemistry

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