Silicon carbide based transistors have great promise in high temperature and high power applications. In particular, the great promise of silicon carbide based metal oxide semiconductor field effect transistors (MOSFETs) has been somewhat limited by materials physics problems in the region near the silicon carbidesilicon dioxide interface. Materials physics problems in SiC bipolar junction transistors (BJTs) are also topics of current interest. Studies involving a combination of high, low, and zero field electrically detected magnetic resonance via spin dependent recombination provide a powerful approach for the understanding of SiC transistor materials physics problems. In this paper, we will review our group's work on multi-field spin dependent recombination of 4H SiC based MOSFETs and BJTs. We emphasize the physical principles involved in the measurements in part because they could potentially be quite useful if they were to be applied to other wide band gap semiconductor device systems.
|Original language||English (US)|
|Number of pages||12|
|State||Published - Jan 1 2014|
|Event||Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 4 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico|
Duration: Oct 5 2014 → Oct 9 2014
All Science Journal Classification (ASJC) codes