High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides

X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu

Research output: Contribution to journalArticle

161 Scopus citations

Abstract

The carrier mobility μ of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0.8)O3 (PZT). In the electron-only regime of the FLG, μ reaches 7×104cm2/Vs at 300 K for n=2.4×1012/cm2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4×105cm2/Vs at low temperature. The temperature-dependent resistivity ρ(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D=7.8±0.5eV.

Original languageEnglish (US)
Article number136808
JournalPhysical Review Letters
Volume102
Issue number13
DOIs
StatePublished - Mar 30 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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