High-mobility, low voltage organic thin film transistors

David J. Gundlach; Hagen Klauk; Chris D. Sheraw; Chung Chen Kuo; Jiunn Ru Huang; Thomas Nelson Jackson

High-mobility, low voltage organic thin film transistors

David J. Gundlach, Hagen Klauk, Chris D. Sheraw, Chung Chen Kuo, Jiunn Ru Huang, Thomas Nelson Jackson

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

We have fabricated photolitographically defined organic thin film transistors (TFTs) on glass or plastic substrates with carrier field-effect mobility larger than 1 cm²/V-s, using the organic semiconductor pentacene as the active layer. In addition to high carrier mobility, devices on glass substrates have subthreshold slope as low as 0.4 V/decade. TFT performance for devices on both substrate types was extracted at low bias (less than -30 V). These results are the best reported to date for organic TFTs on polymeric and glass substrates.

Original language	English (US)
Pages (from-to)	111-114
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1999

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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title = "High-mobility, low voltage organic thin film transistors",

abstract = "We have fabricated photolitographically defined organic thin film transistors (TFTs) on glass or plastic substrates with carrier field-effect mobility larger than 1 cm2/V-s, using the organic semiconductor pentacene as the active layer. In addition to high carrier mobility, devices on glass substrates have subthreshold slope as low as 0.4 V/decade. TFT performance for devices on both substrate types was extracted at low bias (less than -30 V). These results are the best reported to date for organic TFTs on polymeric and glass substrates.",

author = "Gundlach, {David J.} and Hagen Klauk and Sheraw, {Chris D.} and Kuo, {Chung Chen} and Huang, {Jiunn Ru} and Jackson, {Thomas Nelson}",

year = "1999",

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journal = "Technical Digest - International Electron Devices Meeting",

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T1 - High-mobility, low voltage organic thin film transistors

AU - Gundlach, David J.

AU - Klauk, Hagen

AU - Sheraw, Chris D.

AU - Kuo, Chung Chen

AU - Huang, Jiunn Ru

AU - Jackson, Thomas Nelson

PY - 1999

Y1 - 1999

N2 - We have fabricated photolitographically defined organic thin film transistors (TFTs) on glass or plastic substrates with carrier field-effect mobility larger than 1 cm2/V-s, using the organic semiconductor pentacene as the active layer. In addition to high carrier mobility, devices on glass substrates have subthreshold slope as low as 0.4 V/decade. TFT performance for devices on both substrate types was extracted at low bias (less than -30 V). These results are the best reported to date for organic TFTs on polymeric and glass substrates.

AB - We have fabricated photolitographically defined organic thin film transistors (TFTs) on glass or plastic substrates with carrier field-effect mobility larger than 1 cm2/V-s, using the organic semiconductor pentacene as the active layer. In addition to high carrier mobility, devices on glass substrates have subthreshold slope as low as 0.4 V/decade. TFT performance for devices on both substrate types was extracted at low bias (less than -30 V). These results are the best reported to date for organic TFTs on polymeric and glass substrates.

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JO - Technical Digest - International Electron Devices Meeting

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