High-mobility pentacene-based organic thin film transistors

Y. Y. Lin, D. J. Gundlach, S. F. Nelson, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Pentacene based thin film transistors (TFT), with high field-effect mobility and low threshold voltage and subthreshold slope, are fabricated using heavily doped silicon as substrate and gate electrode, with thermally grown silicon dioxide as the TFT gate dielectric. The fabricated organic TFTs with two types of source-drain contacts, namely, a top source-drain contact pentacene TFT with octadecyltrichlorosilane (OTS) deposited on the SiO2 gate dielectric before pentacene deposition and a pentacene TFT with pre-patterned source-drain contacts and OTS deposited prior to pentacene deposition, are studied. The ID-VDS characteristics, field-effect mobility, current on/off ratio, and subtreshold slope for the pentacene organic TFTs are presented.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages60-61
Number of pages2
Publication statusPublished - 1997
EventProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
Duration: Jun 23 1997Jun 25 1997

Other

OtherProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA
Period6/23/976/25/97

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lin, Y. Y., Gundlach, D. J., Nelson, S. F., & Jackson, T. N. (1997). High-mobility pentacene-based organic thin film transistors. In Annual Device Research Conference Digest (pp. 60-61). IEEE.